参数资料
型号: NTY100N10G
厂商: ON Semiconductor
文件页数: 8/8页
文件大小: 0K
描述: MOSFET N-CH 100V 123A TO-264
产品变化通告: Product Obsolescence 01/Jul/2009
标准包装: 25
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 100V
电流 - 连续漏极(Id) @ 25° C: 123A
开态Rds(最大)@ Id, Vgs @ 25° C: 10 毫欧 @ 50A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 350nC @ 10V
输入电容 (Ciss) @ Vds: 10110pF @ 25V
功率 - 最大: 313W
安装类型: 通孔
封装/外壳: TO-264-3,TO-264AA
供应商设备封装: TO-264
包装: 管件
NTY100N10
PACKAGE DIMENSIONS
TO ? 3BPL (TO ? 264)
CASE 340G ? 02
ISSUE J
Q
R
N
F 2 PL
1
? B ?
U
2 3
W
G
D 3 PL
0.25 (0.010)
P
M
0.25 (0.010)
A
L
K
T B S
M
T B
M
J
H
C
? T ?
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
A 28.0 29.0 1.102 1.142
B 19.3 20.3 0.760 0.800
C 4.7 5.3 0.185 0.209
D 0.93 1.48 0.037 0.058
E 1.9 2.1 0.075 0.083
F 2.2 2.4 0.087 0.102
G 5.45 BSC 0.215 BSC
H 2.6 3.0 0.102 0.118
J 0.43 0.78 0.017 0.031
K 17.6 18.8 0.693 0.740
L 11.2 REF 0.411 REF
N 4.35 REF 0.172 REF
P 2.2 2.6 0.087 0.102
Q 3.1 3.5 0.122 0.137
R 2.25 REF 0.089 REF
U 6.3 REF 0.248 REF
W 2.8 3.2 0.110 0.125
STYLE 1:
PIN 1. GATE
2. DRAIN
3. SOURCE
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NTY100N10/D
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