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| 型号： | NTTFS4985NFTAG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 16.3A 8-WDFN |
| 标准包装： | 1,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 16.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.5 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 2.3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 29.4nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2075pF @ 15V |
| 功率 - 最大： | 1.47W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-WDFN（3.3x3.3） |
| 包装： | 带卷 (TR) |
NTTFS4985NF
Power MOSFET
30 V, 64 A, Single N ? Channel, WDFN8
Features
? Integrated Schottky Diode
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? These Devices are Pb ? Free and are RoHS Compliant
Applications
? CPU Power Delivery
? Synchronous Rectification for DC ? DC Converters
? Low Side Switching
? Telecom Secondary Side Rectification
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
V (BR)DSS
30 V
http://onsemi.com
R DS(on) MAX
3.5 m W @ 10 V
5.2 m W @ 4.5 V
N ? Channel MOSFET
D
I D MAX
64 A
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
30
± 20
V
V
G
Continuous Drain
Current R q JA (Note 1)
Power Dissipation R q JA
(Note 1)
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
P D
22
15.9
2.69
A
W
S
MARKING DIAGRAM
1
Continuous Drain
Current R q JA ≤ 10 s
(Note 1)
Power Dissipation
R q JA ≤ 10 s (Note 1)
Continuous Drain
Current R q JA (Note 2)
Power Dissipation
R q JA (Note 2)
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
P D
I D
P D
32.4
23.4
5.85
16.3
11.7
1.47
A
W
A
W
1
WDFN8
( m 8FL)
CASE 511AB
4985
A
Y
WW
G
S
S 4985
S AYWW G
G G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb ? Free Package
D
D
D
D
Continuous Drain
Current R q JC (Note 1)
Power Dissipation
R q JC (Note 1)
T C = 25 ° C
T C = 85 ° C
T C = 25 ° C
I D
P D
64
46
22.73
A
W
(Note: Microdot may be in either location)
ORDERING INFORMATION
Pulsed Drain Current
T A = 25 ° C, t p = 10 m s
I DM
192
A
Device
Package
Shipping ?
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
T J ,
T stg
I S
dV/dt
? 55 to
+150
32
6.0
° C
A
V/ns
NTTFS4985NFTAG
NTTFS4985NFTWG
WDFN8
(Pb ? Free)
WDFN8
(Pb ? Free)
1500 / Tape &
Reel
5000 / Tape &
Reel
Single Pulse Drain ? to ? Source Avalanche Energy
(T J = 25 ° C, V DD = 50 V, V GS = 10 V,
I L = 32 A pk , L = 0.1 mH, R G = 25 W )
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
E AS
T L
52
260
mJ
° C
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 sq ? in pad, 2 oz Cu.
2. Surface ? mounted on FR4 board using the minimum recommended pad size of 90 mm 2 .
? Semiconductor Components Industries, LLC, 2012
January, 2012 ? Rev. 1
1
Publication Order Number:
NTTFS4985NF/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTTFS4985NFTWG | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 64 A, Single Na??Channel, WDFN8 |
| NTTFS4C05N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 75 A, Single Na??Channel,8FL |
| NTTFS4C05NTAG | 功能描述:MOSFET T6 LC SO8FL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTTFS4C05NTWG | 制造商:ON Semiconductor 功能描述:NFET U8FL 30V 75A 3.6MOHM - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / NFET U8FL 30V 75A 3.6MOHM |
| NTTFS4C10NTAG | 功能描述:MOSFET T6 LC SO8FL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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