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| 型号： | NTTFS4985NFTAG |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 16.3A 8-WDFN |
| 标准包装： | 1,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 16.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.5 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 2.3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 29.4nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2075pF @ 15V |
| 功率 - 最大： | 1.47W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-WDFN（3.3x3.3） |
| 包装： | 带卷 (TR) |
NTTFS4985NF
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction ? to ? Case (Drain)
Junction ? to ? Ambient – Steady State (Note 3)
Junction ? to ? Ambient – Steady State (Note 4)
Junction ? to ? Ambient – (t ≤ 10 s) (Note 3)
Symbol
R q JC
R q JA
R q JA
R q JA
Value
5.5
46.4
84.8
21.4
Unit
° C/W
3. Surface ? mounted on FR4 board using 1 sq ? in pad, 2 oz Cu.
4. Surface ? mounted on FR4 board using the minimum recommended pad size of 90 mm 2 .
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
30
15
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 24 V
T J = 25 ° C
500
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V GS(TH)
V GS = V DS , I D = 250 m A
1.2
1.6
2.3
V
Negative Threshold Temperature
Coefficient
V GS(TH) /T J
5.2
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 10 V
I D = 20 A
I D = 10 A
2.8
2.8
3.5
m W
V GS = 4.5 V
I D = 20 A
I D = 10 A
4.16
4.13
5.2
Forward Transconductance
g FS
V DS = 1.5 V, I D = 10 A
34
S
CHARGES AND CAPACITANCES
Input Capacitance
C iss
2075
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V GS = 0 V, f = 1.0 MHz, V DS = 15 V
876
46
Total Gate Charge
Q G(TOT)
13.6
nC
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TH)
Q GS
Q GD
V GS = 4.5 V, V DS = 15 V, I D = 20 A
2.0
5.8
4.1
Total Gate Charge
Q G(TOT)
V GS = 10 V, V DS = 15 V, I D = 20 A
29.4
nC
SWITCHING CHARACTERISTICS (Note 6)
Turn ? On Delay Time
t d(on)
11
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 4.5 V, V DS = 15 V,
I D = 15 A, R G = 3.0 W
24
20
5.4
Turn ? On Delay Time
t d(on)
8.5
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 10 V, V DS = 15 V,
I D = 15 A, R G = 3.0 W
24
25
4.0
5. Pulse Test: pulse width = 300 m s, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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