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参数资料
| 型号： | NTZD3154N |
| 厂商： | ON SEMICONDUCTOR |
| 英文描述： | 20V,540mA,Dual N Channel Small Signal MOSFET(20V,540mA,双N沟道小信号MOSFET) |
| 中文描述： | 20V的，五百四十零毫安，双N通道小信号MOSFET（20V的，五百四十零毫安，双?沟道小信号MOSFET的） |
| 文件页数： | 2/5页 |
| 文件大小： | 139K |
| 代理商： | NTZD3154N |
NTZD3154N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted.)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
to
Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
20
V
Drain
to
Source Breakdown Voltage Tem-
perature Coefficient
V
(BR)DSS
/T
J
14
mV/
°
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V
V
DS
= 16
V
T
J
= 25
°
C
T
J
= 125
°
C
1.0
A
5.0
Gate
to
Source Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
4.5
V
5.0
A
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 A
0.45
1.0
V
Negative Threshold Temperature Coefficient
V
GS(TH)
/T
J
2.0
mV/
°
C
Drain
to
Source On Resistance
R
DS(on)
V
GS
= 4.5
V, I
D
= 540 mA
0.4
0.55
V
GS
= 2.5
V, I
D
= 500 mA
0.5
0.7
V
GS
= 1.8
V, I
D
= 350 mA
0.7
0.9
Forward Transconductance
g
FS
V
DS
= 10 V, I
D
= 540 mA
1.0
S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 16 V
80
150
pF
Output Capacitance
C
OSS
13
25
Reverse Transfer Capacitance
C
RSS
10
20
Total Gate Charge
Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 10 V; I
D
= 540 mA
1.5
2.5
nC
Threshold Gate Charge
Q
G(TH)
0.1
Gate
to
Source Charge
Q
GS
0.2
Gate
to
Drain Charge
Q
GD
0.35
SWITCHING CHARACTERISTICS, V
GS
= V
(Note 4)
Turn
On Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DD
= 10 V, I
D
= 540 mA,
R
G
= 10
6.0
ns
Rise Time
t
r
4.0
Turn
Off Delay Time
t
d(OFF)
16
Fall Time
t
f
8.0
DRAIN
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
= 0 V,
I
S
= 350 mA
T
J
= 25
°
C
T
J
= 125
°
C
0.7
1.2
V
0.6
Reverse Recovery Time
t
RR
V
GS
= 0 V, d
ISD
/d
t
= 100 A/ s, I
S
= 350 mA
6.5
ns
2. Surface
mounted on FR4 board using 1 in. sq. pad size (Cu. area = 1.127 in sq [1 oz] including traces).
3. Pulse Test: pulse width
300 s, duty cycle
2%.
4. Switching characteristics are independent of operating junction temperatures.
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTZD3154NT1G | 功能描述:MOSFET 20V 540mA Dual N-Channel w/ESD RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTZD3154NT1H | 制造商:ON Semiconductor 功能描述:NFET SOT563 20V 540MA TR - Tape and Reel |
| NTZD3154NT2G | 功能描述:MOSFET NFET 540MA 20V TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTZD3154NT5G | 功能描述:MOSFET 20V 540mA Dual N-Channel w/ESD RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTZD3155C | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET Complementary 20 V, 540 mA / -430 mA, with ESD protection, SOT-563 package. |
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