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参数资料
| 型号： | NTZD3154N |
| 厂商： | ON SEMICONDUCTOR |
| 英文描述： | 20V,540mA,Dual N Channel Small Signal MOSFET(20V,540mA,双N沟道小信号MOSFET) |
| 中文描述： | 20V的，五百四十零毫安，双N通道小信号MOSFET（20V的，五百四十零毫安，双?沟道小信号MOSFET的） |
| 文件页数： | 4/5页 |
| 文件大小： | 139K |
| 代理商： | NTZD3154N |
NTZD3154N
http://onsemi.com
4
TYPICAL PERFORMANCE CURVES
(T
J
= 25
°
C unless otherwise noted)
0
50
100
150
200
5
0
5
10
15
20
Figure 7. Capacitance Variation
C
V
DS
= 0 V
T
J
= 25
°
C
V
GS
= 0 V
C
RSS
C
ISS
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
4
8
12
16
20
V
D
,
T
S
V
G
,
T
S
Q
T
Q
GD
Q
GS
Figure 8. Gate
to
Source and
Drain
to
Source Voltage versus Total Charge
Q
g
, TOTAL GATE CHARGE (nC)
I
D
= 0.54 A
T
J
= 25
°
C
V
DS
V
GS
1
10
100
1
10
100
t
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
R
G
, GATE RESISTANCE ( )
t
d(OFF
)
t
f
t
d(ON)
t
r
V
DS
= 10 V
I
D
= 0.2 A
V
GS
= 4.5 V
0
0.2
0.1
0.2
0.3
0.4
0.5
0.6
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
I
S
,
Figure 10. Diode Forward Voltage versus
Current
V
SD
, SOURCE
TO
DRAIN VOLTAGE (V)
V
GS
= 0 V
T
J
= 25
°
C
C
OSS
GATE
TO
SOURCE OR DRAIN
TO
SOURCE VOLTAGE (V)
V
GS
V
DS
ORDERING INFORMATION
Device
Package
Shipping
NTZD3154NT1G
SOT
563
(Pb
Free)
4000 / Tape & Reel
NTZD3154NT5G
SOT
563
(Pb
Free)
8000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
相关PDF资料 |
PDF描述 |
|---|---|
| NTZD3155C | Small Signal MOSFET Complementary 20V, 540mA/430mA, with ESD protection, SOT563 package.(20V，540mA/430mA双功率MOSFET带ESD保护) |
| NTZS3151P | Small Signal MOSFET 20V, 950mA, P Channel SOT563(20V，950mA双功率MOSFET带ESD保护) |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTZD3154NT1G | 功能描述:MOSFET 20V 540mA Dual N-Channel w/ESD RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTZD3154NT1H | 制造商:ON Semiconductor 功能描述:NFET SOT563 20V 540MA TR - Tape and Reel |
| NTZD3154NT2G | 功能描述:MOSFET NFET 540MA 20V TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTZD3154NT5G | 功能描述:MOSFET 20V 540mA Dual N-Channel w/ESD RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTZD3155C | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET Complementary 20 V, 540 mA / -430 mA, with ESD protection, SOT-563 package. |
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