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参数资料
| 型号： | NUP1301ML3T1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | IC DIODE ARRAY LOCAP ESD SOT-23 |
| 产品变化通告： | Copper Wire Change 19/May/2010 |
| 标准包装： | 1 |
| 电压 - 反向隔离（标准值）： | 70V |
| 电压 - 击穿： | 70V |
| 电极标记： | 2 通道阵列 - 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 标准包装 |
| 产品目录页面： | 1131 (CN2011-ZH PDF) |
| 其它名称： | NUP1301ML3T1GOSDKR |
NUP1301ML3T1G, SZNUP1301ML3T1G
MAXIMUM RATINGS (Each Diode) (T J = 25 ? C unless otherwise noted)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
Average Rectified Forward Current (Note 1)
(averaged over any 20 ms period)
Repetitive Peak Forward Current
Non ? Repetitive Peak Forward Current
t = 1.0 m s
t = 1.0 ms
t = 1.0 S
Symbol
V R
I F
I FM(surge)
V RRM
I F(AV)
I FRM
I FSM
Value
70
215
500
70
715
450
2.0
1.0
0.5
Unit
Vdc
mAdc
mAdc
V
mA
mA
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. FR ? 5 = 1.0 0.75 0.062 in.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance Junction ? to ? Ambient
Lead Solder Temperature
Maximum 10 Seconds Duration
Junction Temperature
Storage Temperature
Symbol
R q JA
T L
T J
T stg
Max
625
260
? 65 to 150
? 65 to +150
Unit
? C/W
? C
? C
? C
ELECTRICAL CHARACTERISTICS (T J = 25 ? C unless otherwise noted) (Each Diode)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I (BR) = 100 m A)
Reverse Voltage Leakage Current
(V R = 70 Vdc)
(V R = 25 Vdc, T J = 150 ? C)
(V R = 70 Vdc, T J = 150 ? C)
Diode Capacitance (between I/O and ground)
(V R = 0, f = 1.0 MHz)
Forward Voltage
(I F = 1.0 mAdc)
(I F = 10 mAdc)
(I F = 50 mAdc)
(I F = 150 mAdc)
V (BR)
I R
C D
V F
70
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
2.5
30
50
0.9
715
855
1000
1250
Vdc
m Adc
pF
mV dc
2. FR ? 5 = 1.0 0.75 0.062 in.
3. Alumina = 0.4 0.3 0.024 in, 99.5% alumina.
4. Include SZ-prefix devices where applicable.
http://onsemi.com
2
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相关代理商/技术参数 |
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| NUP1301U | 制造商:NXP Semiconductors 功能描述:DIODE ESD 0.6PF SOT323 制造商:NXP Semiconductors 功能描述:DIODE, ESD, 0.6PF, SOT323 制造商:NXP Semiconductors 功能描述:DIODE, ESD, 0.6PF, SOT323; Diode Type:ESD Protection; Power Dissipation Pd:200mW; Clamping Voltage Vc Max:20V; Diode Case Style:SOT-323; No. of Pins:3 ;RoHS Compliant: Yes |
| NUP1301U,115 | 功能描述:ESD 抑制器 0.6 pF RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
| NUP1301U115 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Ultra low capacitance ESD protection array |
| NUP2105L | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual Line CAN Bus Protector |
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