参数资料
型号: NUP1301ML3T1G
厂商: ON Semiconductor
文件页数: 3/4页
文件大小: 0K
描述: IC DIODE ARRAY LOCAP ESD SOT-23
产品变化通告: Copper Wire Change 19/May/2010
标准包装: 1
电压 - 反向隔离(标准值): 70V
电压 - 击穿: 70V
电极标记: 2 通道阵列 - 单向
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23-3(TO-236)
包装: 标准包装
产品目录页面: 1131 (CN2011-ZH PDF)
其它名称: NUP1301ML3T1GOSDKR
NUP1301ML3T1G, SZNUP1301ML3T1G
ESD Input Signal
Figure 1. ESD Test Circuit
APPLICATION NOTE
Electrostatic Discharge
A common means of protecting high ? speed data lines is
to employ low ? capacitance diode arrays in a rail ? to ? rail
configuration. Two devices per line are connected between
two fixed voltage references such as V CC and ground. When
the transient voltage exceeds the forward voltage (V F ) drop
of the diode plus the reference voltage, the diodes direct the
surge to the supply rail or ground. This method has several
advantages including low loading capacitance, fast response
time, and inherent bidirectionality (within the reference
voltages). See Figure 1 for the test circuit used to verify the
ESD rating for this device.
http://onsemi.com
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