参数资料
| 型号： | NUP8011MUTAG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | IC TVS ARRAY LO CAP ESD 8-UDFN |
| 标准包装： | 1 |
| 电压 - 工作： | 4.3V |
| 技术： | 混合技术 |
| 功率（瓦特）： | 380mW |
| 电路数： | 1 |
| 应用： | 通用 |
| 封装/外壳： | 8-UFDFN 裸露焊盘 |
| 供应商设备封装： | 8-UDFN（1.8x1.2） |
| 包装： | 标准包装 |
| 产品目录页面： | 1131 (CN2011-ZH PDF) |
| 其它名称： | NUP8011MUTAGOSDKR |
NUP8011MU
Transient Voltage Suppressors
ESD Protection Diodes with Low
Clamping Voltage Array
This integrated transient voltage suppressor device (TVS) is
designed for applications requiring transient overvoltage protection. It
is intended for use in sensitive equipment such as computers, printers,
business machines, communication systems, and other applications.
Its integrated design provides very effective and reliable protection for
http://onsemi.com
eight separate lines using only one package. These devices are ideal
for situations where board space is at a premium.
1
8
MARKING
DIAGRAM
P3 M
G
1
Features
? Low Clamping Voltage
? UDFN Package, 1.2 x 1.8 mm
? Standoff Voltage: 4.3 V
? Low Leakage Current
? IEC61000 ? 4 ? 2, Level 4 ESD Protection
? Moisture Sensitivity Level 1
? This is a Pb ? Free Device
Benefits
? Provides Protection for ESD Industry Standards: IEC 61000, HBM
? Protects the Line Against Transient Voltage Conditions
? Minimize Power Consumption of the System
? Minimize PCB Board Space
Applications
? ESD Protection for Data Lines
? Wireless Phones
? Handheld Products
? Notebook Computers
? LCD Displays
MAXIMUM RATINGS (T A = 25 ° C unles s otherwis e noted)
2 7
3 6
4 5
(Top View)
8
1
UDFN8
CASE 517AD
P3 = Specific Device Code
M = Month Code
G = Pb ? Free Package
Characteristic
Symbol
Value
Unit
Steady State Power ? 1 Diode (Note 1)
Thermal Resistance,
Junction ? to ? Ambient
Above 25 ° C, Derate
Maximum Junction Temperature
Operating Temperature Range
Storage Temperature Range
P D
R q JA
T Jmax
T OP
T stg
380
327
3.05
150
? 40 to +85
? 55 to +150
mW
° C/W
mW/ ° C
° C
° C
° C
PIN CONNECTIONS
1 4
Lead Solder Temperature (10 seconds
duration)
IEC 61000 ? 4 ? 2 (ESD)Contact
T L
260
$ 8.0
° C
kV
8
5
Machine Model ? Class C
Human Body Model ? Class 3B
MM
HBM
400
8.0
V
kV
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Only 1 diode under power. For all 4 diodes under power, P D will be 25%.
Mounted on FR ? 4 board with min pad.
See Application Note AND8308/D for further description of
survivability specs.
Device Package Shipping
NUP8011MUTAG UDFN8 3000 / Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2009
September, 2009 ? Rev. 2
1
Publication Order Number:
NUP8011MU/D
相关PDF资料 |
PDF描述 |
|---|---|
| NUS1204MNT1G | IC OVP W/P-CH MOSFET WDFN6 2X2 |
| NUS3045MNT1G | IC OVP W/30V P-CH MOSFET DFN8 |
| NUS3055MUTAG | IC OVP LOW PRO W/MOSFET 8-TLLGA |
| NUS6160MNTWG | IC OVP LOW PRO W/MOSFET 22-QFN |
| NUS6189MNTWG | IC OVP LOW PRO W/MOSFET 22-QFN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NUP8020X6 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:5−Line Transient Voltage Suppressor Array |
| NUP8020X6_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:5−Line Transient Voltage Suppressor Array |
| NUP8020X6T1G | 功能描述:TVS二极管阵列 5 LN TRANSIENT VLTG SUPRSSR ARRAY RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| NUP8028MN | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Low Capacitance Transient Voltage Suppressor Array |
| NUP8028MNT1G | 功能描述:TVS二极管阵列 8 LINE LOW CAP TVS RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
发布紧急采购，3分钟左右您将得到回复。