参数资料
| 型号： | NUP8011MUTAG |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/5页 |
| 文件大小： | 0K |
| 描述： | IC TVS ARRAY LO CAP ESD 8-UDFN |
| 标准包装： | 1 |
| 电压 - 工作： | 4.3V |
| 技术： | 混合技术 |
| 功率（瓦特）： | 380mW |
| 电路数： | 1 |
| 应用： | 通用 |
| 封装/外壳： | 8-UFDFN 裸露焊盘 |
| 供应商设备封装： | 8-UDFN（1.8x1.2） |
| 包装： | 标准包装 |
| 产品目录页面： | 1131 (CN2011-ZH PDF) |
| 其它名称： | NUP8011MUTAGOSDKR |
NUP8011MU
IEC 61000 ? 4 ? 2 Spec.
Test First Peak
Voltage Current
Level (kV) (A)
Current at
30 ns (A)
Current at
60 ns (A)
I peak
100%
90%
IEC61000 ? 4 ? 2 Waveform
1
2
7.5
4
2
2
3
4
4
6
8
15
22.5
30
8
12
16
4
6
8
I @ 30 ns
I @ 60 ns
10%
t P = 0.7 ns to 1 ns
Figure 3. IEC61000 ? 4 ? 2 Spec
ESD Gun
TVS
Oscilloscope
50 W
50 W
Cable
Figure 4. Diagram of ESD Test Setup
The following is taken from Application Note
AND8308/D ? Interpretation of Datasheet Parameters
for ESD Devices.
ESD Voltage Clamping
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000 ? 4 ? 2 waveform. Since the
IEC61000 ? 4 ? 2 was written as a pass/fail spec for larger
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
http://onsemi.com
3
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