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| 型号： | NVTFS5820NLTAG |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 37A 8WDFN |
| 标准包装： | 1,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 11A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 11.5 毫欧 @ 8.7A，10V |
| Id 时的 Vgs(th)（最大）： | 2.3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 28nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1462pF @ 25V |
| 功率 - 最大： | 3.2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-WDFN（3.3x3.3） |
| 包装： | 带卷 (TR) |
NVTFS5820NL
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
60
57
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 60 V
T J = 25 ° C
T J = 125 ° C
1.0
10
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
1.5
6.2
2.3
V
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 10 V
I D = 8.7 A
10.1
11.5
m W
V GS = 4.5 V
I D = 7.3 A
13.0
15
Forward Transconductance
g FS
V DS = 5 V, I D = 10 A
24.6
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C iss
1462
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V GS = 0 V, f = 1.0 MHz, V DS = 25 V
150
96
Total Gate Charge
Q G(TOT)
V GS = 10 V, V DS = 48 V, I D = 10 A
28
nC
V GS = 4.5 V, V DS = 48 V, I D = 10 A
15
Threshold Gate Charge
Q G(TH)
1
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q GS
Q GD
V GS = 4.5 V, V DS = 48 V, I D = 10 A
4
8
Plateau Voltage
Gate Resistance
V GP
R G
3
0.62
V
W
SWITCHING CHARACTERISTICS (Note 6)
Turn ? On Delay Time
t d(on)
10
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 4.5 V, V DS = 48 V,
I D = 10 A, R G = 2.5 W
28
19
22
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = 10 A
T J = 25 ° C
T J = 125 ° C
0.79
0.65
1.2
V
Reverse Recovery Time
t RR
19
ns
Charge Time
Discharge Time
t a
t b
V GS = 0 V, d IS /d t = 100 A/ m s,
I S = 10 A
13
6
Reverse Recovery Charge
Q RR
15
nC
5. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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| NVTFS5820NLTWG | 功能描述:MOSFET Single N-Channel 60V,29A,11.5mohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NVTFS5826NL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:150 mA, Ultra Low Supply Current, Low Dropout Regulator |
| NVTFS5826NLTAG | 功能描述:MOSFET Single N-Channel 60V,20A,24mohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NVTFS5826NLTWG | 功能描述:MOSFET Single N-Channel 60V,20A,24mohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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