- 您现在的位置：买卖IC网 > PDF目录378681 > NX3008NBK (NXP SEMICONDUCTORS) 30 V, 400 mA N-channel Trench MOSFET PDF资料下载
参数资料
| 型号： | NX3008NBK |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30 V, 400 mA N-channel Trench MOSFET |
| 中文描述： | SMALL SIGNAL, FET |
| 封装： | PLASTIC, TO-236AB, 3 PIN |
| 文件页数： | 6/16页 |
| 文件大小： | 872K |
| 代理商： | NX3008NBK |
NX3008NBK
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 2 August 2011
6 of 16
NXP Semiconductors
NX3008NBK
30 V, 400 mA N-channel Trench MOSFET
7.
Characteristics
Table 7.
Symbol
Static characteristics
V
(BR)DSS
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
I
D
= 250 μA; V
GS
= 0 V; T
j
= 25 °C
30
-
-
V
V
GSth
I
D
= 250 μA; V
DS
= V
GS
; T
j
= 25 °C
0.6
0.9
1.1
V
I
DSS
V
DS
= 30 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 30 V; V
GS
= 0 V; T
j
= 150 °C
V
GS
= 8 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -8 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 4.5 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -4.5 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 2.5 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -2.5 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 4.5 V; I
D
= 350 mA; T
j
= 25 °C
V
GS
= 4.5 V; I
D
= 350 mA; T
j
= 150 °C
V
GS
= 2.5 V; I
D
= 200 mA; T
j
= 25 °C
V
GS
= 1.8 V; I
D
= 10 mA; T
j
= 25 °C
V
DS
= 10 V; I
D
= 350 mA; T
j
= 25 °C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.2
0.2
10
10
1
1
1
1.8
1.4
2
310
1
10
1
1
-
-
-
-
1.4
2.5
2.1
2.8
-
μA
μA
μA
μA
nA
nA
nA
nA
I
GSS
gate leakage current
R
DSon
drain-source on-state
resistance
g
fs
forward
transconductance
mS
Dynamic characteristics
Q
G(tot)
Q
GS
Q
GD
C
iss
C
oss
C
rss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
V
DS
= 15 V; I
D
= 400 mA; V
GS
= 4.5 V;
T
j
= 25 °C
-
-
-
-
-
-
0.52
0.17
0.08
34
6.5
2.2
0.68
-
-
50
-
-
nC
nC
nC
pF
pF
pF
V
DS
= 15 V; f = 1 MHz; V
GS
= 0 V;
T
j
= 25 °C
t
d(on)
t
r
t
d(off)
t
f
Source-drain diode
V
SD
V
DS
= 20 V; R
L
= 250
; V
GS
= 4.5 V;
R
G(ext)
= 6
; T
j
= 25 °C
-
-
-
-
15
11
69
19
30
-
138
-
ns
ns
ns
ns
source-drain voltage
I
S
= 350 mA; V
GS
= 0 V; T
j
= 25 °C
0.47
0.85
1.2
V
相关PDF资料 |
PDF描述 |
|---|---|
| NX3008PBKS | 30 V, 200 mA dual P-channel Trench MOSFET |
| NX3008PBKT | 30 V, 200 mA P-channel Trench MOSFET |
| NX3008PBKV | 30 V, 220 mA dual P-channel Trench MOSFET |
| NX3008PBKW | 30 V, 200 mA P-channel Trench MOSFET |
| NX3008PBK | 30 V, 230 mA P-channel Trench MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NX3008NBK,215 | 功能描述:MOSFET 30V 400 MA N-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NX3008NBKMB | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:30 V, single N-channel Trench MOSFET |
| NX3008NBKMB,315 | 功能描述:MOSFET N-Chan 30V 530mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NX3008NBKS | 制造商:NXP Semiconductors 功能描述:MOSFETNN CH 30V 350MA SOT363 制造商:NXP Semiconductors 功能描述:MOSFET,NN CH, 30V, 350MA, SOT363 制造商:NXP Semiconductors 功能描述:MOSFET,NN CH, 30V, 350MA, SOT363, Transistor Polarity:Dual N Channel, Continuous |
| NX3008NBKS,115 | 功能描述:MOSFET 30V 350 MA DUAL N-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。