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参数资料
| 型号： | NX3008NBK |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30 V, 400 mA N-channel Trench MOSFET |
| 中文描述： | SMALL SIGNAL, FET |
| 封装： | PLASTIC, TO-236AB, 3 PIN |
| 文件页数： | 7/16页 |
| 文件大小： | 872K |
| 代理商： | NX3008NBK |
NX3008NBK
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 2 August 2011
7 of 16
NXP Semiconductors
NX3008NBK
30 V, 400 mA N-channel Trench MOSFET
T
j
= 25 °C
T
j
= 25 °C; V
DS
= 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6.
Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7.
Sub-threshold drain current as a function of
gate-source voltage
T
j
= 25 °C
(1) V
GS
= 1.5 V
(2) V
GS
= 1.75 V
(3) V
GS
= 2.0 V
(4) V
GS
= 2.25 V
(5) V
GS
= 2.5 V
(6) V
GS
= 4.5 V
Drain-source on-state resistance as a function
of drain current; typical values
I
D
= 400 mA
(1) T
j
= 150 °C
(2) T
j
= 25 °C
Fig 8.
Fig 9.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
V
DS
(V)
0
4
3
1
2
001aao267
0.2
0.1
0.3
0.4
I
D
(A)
0.0
4.5 V
2.5 V
1.75 V
2 V
1.5 V
V
GS
= 1.25 V
001aao268
V
GS
(V)
0.0
1.5
1.0
0.5
10
-4
10
-5
10
-3
I
D
(A)
10
-6
(1)
(3)
(2)
I
D
(A)
0.0
0.4
0.3
0.1
0.2
001aao269
2
4
6
R
DS
(on)
(Ω)
0
(1)
(3)
(6)
(5)
(2)
(4)
V
GS
(V)
0
5
4
2
3
1
001aao270
2
4
6
R
DS
(on)
(Ω)
0
(2)
(1)
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| NX3008NBKS | 制造商:NXP Semiconductors 功能描述:MOSFETNN CH 30V 350MA SOT363 制造商:NXP Semiconductors 功能描述:MOSFET,NN CH, 30V, 350MA, SOT363 制造商:NXP Semiconductors 功能描述:MOSFET,NN CH, 30V, 350MA, SOT363, Transistor Polarity:Dual N Channel, Continuous |
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