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参数资料
| 型号： | NX3008NBKT |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30 V, 350 mA N-channel Trench MOSFET |
| 中文描述： | SMALL SIGNAL, FET |
| 封装： | PLASTIC, SC-75, 6 PIN |
| 文件页数： | 4/16页 |
| 文件大小： | 863K |
| 代理商： | NX3008NBKT |
NX3008NBKT
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 1 August 2011
4 of 16
NXP Semiconductors
NX3008NBKT
30 V, 350 mA N-channel Trench MOSFET
Fig 1.
Normalized total power dissipation as a
function of junction temperature
Fig 2.
Normalized continuous drain current as a
function of junction temperature
I
DM
is a single pulse
(1) t
p
= 1 ms
(2) t
p
= 10 ms
(3) DC; T
sp
= 25 °C
(4) t
p
= 100 ms
(5) DC; T
amb
= 25 °C; 1 cm
2
drain mounting pad
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
Fig 3.
T
j
(°C)
-75
175
125
25
75
-25
001aao121
40
80
120
P
der
(%)
0
T
j
(°C)
-75
175
125
25
75
-25
001aao122
40
80
120
I
der
(%)
0
001aao245
V
DS
(V)
10
-1
10
2
10
1
1
10
-1
10
l
D
(A)
10
-2
(1)
(2)
(3)
(4)
(5)
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相关代理商/技术参数 |
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| NX3008NBKT,115 | 功能描述:MOSFET 30V 350 MA N-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NX3008NBKV | 制造商:NXP Semiconductors 功能描述:MOSFETNN CH 30V 400MA SOT666 制造商:NXP Semiconductors 功能描述:MOSFET,NN CH, 30V, 400MA, SOT666 制造商:NXP Semiconductors 功能描述:MOSFET,NN CH, 30V, 400MA, SOT666, Transistor Polarity:Dual N Channel, Continuous |
| NX3008NBKV,115 | 功能描述:MOSFET 30V 400 MA DUAL N-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NX3008NBKW | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 30V 350MA SOT323 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 30V, 350MA, SOT323 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 30V, 350MA, SOT323, Transistor Polarity:N Channel, Continuous Drai |
| NX3008NBKW,115 | 功能描述:MOSFET 30V 350 MA N-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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