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参数资料
| 型号： | NX3008NBKW |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30 V, 350 mA N-channel Trench MOSFET |
| 中文描述： | SMALL SIGNAL, FET |
| 封装： | PLASTIC, SC-70, 3 PIN |
| 文件页数： | 1/16页 |
| 文件大小： | 868K |
| 代理商： | NX3008NBKW |
1.
Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Very fast switching
Low threshold voltage
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
Static characteristics
R
DSon
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
NX3008NBKW
30 V, 350 mA N-channel Trench MOSFET
Rev. 1 — 2 August 2011
Product data sheet
ST2
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
Conditions
T
j
= 25 °C
Min
-
-8
Typ
-
-
-
Max
30
8
350
Unit
V
V
mA
V
GS
= 4.5 V; T
amb
= 25 °C
[1]
-
drain-source on-state
resistance
V
GS
= 4.5 V; I
D
= 350 mA;
T
j
= 25 °C
-
1
1.4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NX3008NBKW,115 | 功能描述:MOSFET 30V 350 MA N-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NX3008PBK | 制造商:NXP Semiconductors 功能描述:MOSFET P CH 30V 230MA SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, P CH, 30V, 230MA, SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, P CH, 30V, 230MA, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-230mA; Drain Source Voltage Vds:-30V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV ;RoHS Compliant: Yes |
| NX3008PBK,215 | 功能描述:MOSFET 30V 230 MA P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NX3008PBKMB | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:30 V, single P-channel Trench MOSFET |
| NX3008PBKMB,315 | 功能描述:MOSFET P-Chan -30V -300mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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