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参数资料
| 型号： | NX3008NBKW |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30 V, 350 mA N-channel Trench MOSFET |
| 中文描述： | SMALL SIGNAL, FET |
| 封装： | PLASTIC, SC-70, 3 PIN |
| 文件页数： | 3/16页 |
| 文件大小： | 868K |
| 代理商： | NX3008NBKW |
NX3008NBKW
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 2 August 2011
3 of 16
NXP Semiconductors
NX3008NBKW
30 V, 350 mA N-channel Trench MOSFET
5.
Limiting values
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[3]
Measured between all pins.
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Limiting values
Symbol
V
DS
V
GS
I
D
Parameter
drain-source voltage
gate-source voltage
drain current
Conditions
T
j
= 25 °C
Min
-
-8
Max
30
8
350
230
1.4
260
310
830
150
150
150
Unit
V
V
mA
mA
A
mW
mW
mW
°C
°C
°C
V
GS
= 4.5 V; T
amb
= 25 °C
V
GS
= 4.5 V; T
amb
= 100 °C
T
amb
= 25 °C; single pulse; t
p
≤
10 μs
T
amb
= 25 °C
[1]
-
[1]
-
I
DM
P
tot
peak drain current
total power dissipation
-
[2]
-
[1]
-
T
sp
= 25 °C
-
-55
-55
-65
T
j
T
amb
T
stg
Source-drain diode
I
S
ESD maximum rating
V
ESD
junction temperature
ambient temperature
storage temperature
source current
T
amb
= 25 °C
[1]
-
300
mA
electrostatic discharge voltage
HBM
[3]
-
2000
V
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相关代理商/技术参数 |
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| NX3008NBKW,115 | 功能描述:MOSFET 30V 350 MA N-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NX3008PBK | 制造商:NXP Semiconductors 功能描述:MOSFET P CH 30V 230MA SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, P CH, 30V, 230MA, SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, P CH, 30V, 230MA, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-230mA; Drain Source Voltage Vds:-30V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV ;RoHS Compliant: Yes |
| NX3008PBK,215 | 功能描述:MOSFET 30V 230 MA P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NX3008PBKMB | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:30 V, single P-channel Trench MOSFET |
| NX3008PBKMB,315 | 功能描述:MOSFET P-Chan -30V -300mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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