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参数资料
| 型号： | NX3008PBK |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30 V, 230 mA P-channel Trench MOSFET |
| 中文描述： | SMALL SIGNAL, FET |
| 封装： | PLASTIC, TO-236AB, 3 PIN |
| 文件页数： | 4/16页 |
| 文件大小： | 873K |
| 代理商： | NX3008PBK |
NX3008PBK
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 1 August 2011
4 of 16
NXP Semiconductors
NX3008PBK
30 V, 230 mA P-channel Trench MOSFET
Fig 1.
Normalized total power dissipation as a
function of junction temperature
Fig 2.
Normalized continuous drain current as a
function of junction temperature
I
DM
is a single pulse
(1) t
p
= 1 ms
(2) t
p
= 10 ms
(3) t
p
= 100 ms
(4) DC; T
sp
= 25 °C
(5) DC; T
amb
= 25 °C; 1 cm
2
drain mounting pad
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
Fig 3.
T
j
(°C)
-75
175
125
25
75
-25
001aao121
40
80
120
P
der
(%)
0
T
j
(°C)
-75
175
125
25
75
-25
001aao122
40
80
120
I
der
(%)
0
001aao255
V
DS
(V)
-10
-1
-10
2
-10
-1
-1
-10
-1
-10
l
D
(A)
-10
-2
(1)
(2)
(3)
(4)
(5)
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相关代理商/技术参数 |
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|---|---|
| NX3008PBK,215 | 功能描述:MOSFET 30V 230 MA P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NX3008PBKMB | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:30 V, single P-channel Trench MOSFET |
| NX3008PBKMB,315 | 功能描述:MOSFET P-Chan -30V -300mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NX3008PBKS | 制造商:NXP Semiconductors 功能描述:MOSFETPP CH 30V 200MA SOT363 制造商:NXP Semiconductors 功能描述:MOSFET,PP CH, 30V, 200MA, SOT363 制造商:NXP Semiconductors 功能描述:MOSFET,PP CH, 30V, 200MA, SOT363; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-200mA; Drain Source Voltage Vds:-30V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV ;RoHS Compliant: Yes |
| NX3008PBKS,115 | 功能描述:MOSFET 30V 200 MA DUAL P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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