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参数资料
| 型号： | NX3008PBK |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30 V, 230 mA P-channel Trench MOSFET |
| 中文描述： | SMALL SIGNAL, FET |
| 封装： | PLASTIC, TO-236AB, 3 PIN |
| 文件页数： | 8/16页 |
| 文件大小： | 873K |
| 代理商： | NX3008PBK |
NX3008PBK
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 1 August 2011
8 of 16
NXP Semiconductors
NX3008PBK
30 V, 230 mA P-channel Trench MOSFET
V
DS
> I
D
x R
DSon
(1) T
j
= 25 °C
(2) T
j
= 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 11. Normalized drain-source on-state resistance as
a function of junction temperature; typical
values
I
D
= -0.25 mA; V
DS
= V
GS
(1) maximum values
(2) typical values
(3) minimum values
f = 1 MHz; V
GS
= 0 V
(1)C
iss
(2)C
oss
(3)C
rss
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 12. Gate-source threshold voltage as a function of
junction temperature
001aao260
V
GS
(V)
0
-3
-2
-1
-0.10
-0.15
-0.05
-0.20
-0.25
I
D
(A)
0.00
(2)
(1)
T
j
(C)
-60
180
120
0
60
001aao261
1.0
0.5
1.5
2.0
a
0.0
T
j
(C)
-60
180
120
0
60
001aao262
-0.5
-1.0
-1.5
V
GS(th)
(V)
0.0
(1)
(2)
(3)
001aao263
V
DS
(V)
-10
-1
-10
2
-10
-1
10
10
2
C
(pF)
1
(1)
(2)
(3)
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相关代理商/技术参数 |
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|---|---|
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| NX3008PBKS | 制造商:NXP Semiconductors 功能描述:MOSFETPP CH 30V 200MA SOT363 制造商:NXP Semiconductors 功能描述:MOSFET,PP CH, 30V, 200MA, SOT363 制造商:NXP Semiconductors 功能描述:MOSFET,PP CH, 30V, 200MA, SOT363; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-200mA; Drain Source Voltage Vds:-30V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV ;RoHS Compliant: Yes |
| NX3008PBKS,115 | 功能描述:MOSFET 30V 200 MA DUAL P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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