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参数资料
| 型号： | NX3008PBKT |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30 V, 200 mA P-channel Trench MOSFET |
| 中文描述： | SMALL SIGNAL, FET |
| 封装： | PLASTIC, SC-75, 6 PIN |
| 文件页数： | 11/16页 |
| 文件大小： | 868K |
| 代理商： | NX3008PBKT |
NX3008PBKT
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 1 August 2011
11 of 16
NXP Semiconductors
NX3008PBKT
30 V, 200 mA P-channel Trench MOSFET
9.
Package outline
Fig 18. Package outline SOT416 (SOT416)
UNIT
A1
max
bp
c
D
E
e
1
H
E
L
p
Q
w
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
mm
0.1
0.30
0.15
0.25
0.10
1.8
1.4
0.9
0.7
0.5
e
1
1.75
1.45
0.2
v
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
0.23
0.13
SOT416
SC-75
w
M
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
A
B
B
v
M
A
0
0.5
1 mm
scale
A
0.95
0.60
c
X
1
2
3
Plastic surface-mounted package; 3 leads
SOT416
04-11-04
06-03-16
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NX3008PBKT,115 | 功能描述:MOSFET 30V 200 MA P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NX3008PBKV | 制造商:NXP Semiconductors 功能描述:MOSFETPP CH 30V 220MA SOT666 制造商:NXP Semiconductors 功能描述:MOSFET,PP CH, 30V, 220MA, SOT666 制造商:NXP Semiconductors 功能描述:MOSFET,PP CH, 30V, 220MA, SOT666; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-220mA; Drain Source Voltage Vds:-30V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV ;RoHS Compliant: Yes |
| NX3008PBKV,115 | 功能描述:MOSFET 30V 220 MA DUAL P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NX3008PBKW | 制造商:NXP Semiconductors 功能描述:MOSFET P CH 30V 200MA SOT323 制造商:NXP Semiconductors 功能描述:MOSFET, P CH, 30V, 200MA, SOT323 制造商:NXP Semiconductors 功能描述:MOSFET, P CH, 30V, 200MA, SOT323; Transistor Polarity:P Channel; Continuous Drain Current Id:-200mA; Drain Source Voltage Vds:-30V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV ;RoHS Compliant: Yes |
| NX3008PBKW,115 | 功能描述:MOSFET 30V 200 MA P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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