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参数资料
| 型号： | NX3008PBKT |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30 V, 200 mA P-channel Trench MOSFET |
| 中文描述： | SMALL SIGNAL, FET |
| 封装： | PLASTIC, SC-75, 6 PIN |
| 文件页数： | 7/16页 |
| 文件大小： | 868K |
| 代理商： | NX3008PBKT |
NX3008PBKT
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 1 August 2011
7 of 16
NXP Semiconductors
NX3008PBKT
30 V, 200 mA P-channel Trench MOSFET
T
j
= 25 °C
T
j
= 25 °C; V
DS
= -5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6.
Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7.
Sub-threshold drain current as a function of
gate-source voltage
T
j
= 25 °C
(1) V
GS
= -1.75 V
(2) V
GS
= -2.0 V
(3) V
GS
= -2.25 V
(4) V
GS
= -2.5 V
(5) V
GS
= -3.0 V
(6) V
GS
= -4.5 V
Drain-source on-state resistance as a function
of drain current; typical values
I
D
= -200 mA
(1) T
j
= 150 °C
(2) T
j
= 25 °C
Fig 8.
Fig 9.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
V
DS
(V)
0
-4
-3
-1
-2
001aao256
-0.10
-0.15
-0.05
-0.20
-0.25
I
D
(A)
0.00
-2 V
-2.5 V
V
GS
= -1.5 V
-4.5 V
-3 V
001aao257
V
GS
(V)
0.0
-1.5
-1.0
-0.5
-10
-4
-10
-5
-10
-3
I
D
(A)
-10
-6
(2)
(1)
(3)
I
D
(A)
0
-0.25
-0.20
-0.10
-0.15
-0.05
001aao258
14
R
DS
(on)
(Ω)
10
6
2
0
4
8
12
(1)
(2)
(3)
(5)
(6)
(4)
V
GS
(A)
0
-5
-4
-2
-3
-1
001aao259
14
R
DS
(on)
(Ω)
10
6
2
0
4
8
12
(1)
(2)
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相关代理商/技术参数 |
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|---|---|
| NX3008PBKT,115 | 功能描述:MOSFET 30V 200 MA P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NX3008PBKV | 制造商:NXP Semiconductors 功能描述:MOSFETPP CH 30V 220MA SOT666 制造商:NXP Semiconductors 功能描述:MOSFET,PP CH, 30V, 220MA, SOT666 制造商:NXP Semiconductors 功能描述:MOSFET,PP CH, 30V, 220MA, SOT666; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-220mA; Drain Source Voltage Vds:-30V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV ;RoHS Compliant: Yes |
| NX3008PBKV,115 | 功能描述:MOSFET 30V 220 MA DUAL P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NX3008PBKW | 制造商:NXP Semiconductors 功能描述:MOSFET P CH 30V 200MA SOT323 制造商:NXP Semiconductors 功能描述:MOSFET, P CH, 30V, 200MA, SOT323 制造商:NXP Semiconductors 功能描述:MOSFET, P CH, 30V, 200MA, SOT323; Transistor Polarity:P Channel; Continuous Drain Current Id:-200mA; Drain Source Voltage Vds:-30V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV ;RoHS Compliant: Yes |
| NX3008PBKW,115 | 功能描述:MOSFET 30V 200 MA P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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