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参数资料
| 型号： | P6SMBJ10TRF |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 1/5页 |
| 文件大小： | 91K |
| 代理商： | P6SMBJ10TRF |
World Products Inc. 19654 8th St. East, Sonoma, CA, USA, 95476 . . Phone: (707) 996-5201 . . Fax: (707) 996-3380
TVS Diodes - Surface Mount - 600 Watt Specifications - P6SMBJ Series Electrical Characteristics
Part
Number*
Uni
Part
Marking
Bi
Part
Marking
Rated
Standoff
Voltage
Vwm
Breakdown Voltage Maximum
Stand By
Current
@Vwm+
Id
10/1000s
Maximum
Clamping
Voltage
@Ippm#
Vc Max
10/1000s
Rated Peak
Impulse
Current
Ippm#
Vbr
Min
@It
(Volts)
(mA)
(A)
(Volts)
(Amperes)
P6SMBJ5.0
KD
AD
5.0
6.40
10
800.0
9.6
62.5
P6SMBJ5.0A
KE
AE
5.0
6.40
10
800.0
9.2
65.2
P6SMBJ6.0
KF
AF
6.0
6.67
10
800.0
11.4
52.6
P6SMBJ6.0A
KG
AG
6.0
6.67
10
800.0
10.3
58.3
P6SMBJ6.5
KH
AH
6.5
7.22
10
500.0
12.3
48.7
P6SMBJ6.5A
KK
AK
6.5
7.22
10
500.0
11.2
53.6
P6SMBJ7.0
KL
AL
7.0
7.78
10
200.0
13.3
45.1
P6SMBJ7.0A KM
AM
7.0
7.78
10
200.0
12.0
50.0
P6SMBJ7.5
KN
AN
7.5
8.33
1
100.0
14.3
42.0
P6SMBJ7.5A
KP
AP
7.5
8.33
1
100.0
12.9
46.5
P6SMBJ8.0
KQ
AQ
8.0
8.89
1
50.0
15.0
40.0
P6SMBJ8.0A
KR
AR
8.0
8.89
1
50.0
13.6
44.1
P6SMBJ8.5
KS
AS
8.5
9.44
1
20.0
15.9
37.7
P6SMBJ8.5A
KT
AT
8.5
9.44
1
20.0
14.4
41.7
P6SMBJ9.0
KU
AU
9.0
10.00
1
10.0
16.9
35.5
P6SMBJ9.0A
KV
AV
9.0
10.00
1
10.0
15.4
39.0
P6SMBJ10
KW
AW
10.0
11.10
1
5.0
18.8
31.9
P6SMBJ10A
KX
AX
10.0
11.10
1
5.0
17.0
35.3
P6SMBJ11
KY
AY
11.0
12.20
1
5.0
20.1
29.9
P6SMBJ11A
KZ
AZ
11.0
12.20
1
5.0
18.2
33.0
P6SMBJ12
LD
BD
12.0
13.30
1
5.0
22.0
27.3
P6SMBJ12A
LE
BE
12.0
13.30
1
5.0
19.9
30.2
P6SMBJ13
LF
BF
13.0
14.40
1
5.0
23.8
25.2
P6SMBJ13A
LG
BG
13.0
14.40
1
5.0
21.5
27.9
P6SMBJ14
LH
BH
14.0
15.60
1
5.0
25.8
23.3
P6SMBJ14A
LK
BK
14.0
15.60
1
5.0
23.2
25.8
* = Add "C" or "CA" suffix for bidirectional device types.
+ = For Bidirectional Types Having Vwm <= 10V, their Id limit is doubled.
# = See General Information for Impulse Current Waveform.
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PDF描述 |
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| P6SMBJ170CTRF | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| P6SMBJ110C | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| P6SMBJ150 | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| P6SMBJ11 | 功能描述:TVS 二极管 - 瞬态电压抑制器 8.92Vso 9.9Vbr 37A RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P6SMBJ110 | 功能描述:TVS 二极管 - 瞬态电压抑制器 89.2Vso 99Vbr 3.8A RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P6SMBJ110A | 功能描述:TVS 二极管 - 瞬态电压抑制器 94Vso 105Vbr 4A RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P6SMBJ110A-T3 | 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR |
| P6SMBJ110C | 功能描述:TVS 二极管 - 瞬态电压抑制器 89.2Vso 99Vbr 3.8A RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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