- 您现在的位置：买卖IC网 > PDF目录296761 > P6SMBJ10TRF 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA PDF资料下载
参数资料
| 型号： | P6SMBJ10TRF |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 2/5页 |
| 文件大小： | 91K |
| 代理商： | P6SMBJ10TRF |
World Products Inc. 19654 8th St. East, Sonoma, CA, USA, 95476 . . Phone: (707) 996-5201 . . Fax: (707) 996-3380
TVS Diodes - Surface Mount - 600 Watt Specifications - P6SMBJ Series Electrical Characteristics
- (Continued)
Part
Number*
Uni
Part
Marking
Bi
Part
Marking
Rated
Standoff
Voltage
Vwm
Breakdown Voltage Maximum
Stand By
Current
@Vwm+
Id
10/1000s
Maximum
Clamping
Voltage
@Ippm#
Vc Max
10/1000s
Rated Peak
Impulse
Current
Ippm#
Vbr
Min
@It
(Volts)
(mA)
(A)
(Volts)
(Amperes)
P6SMBJ15
LL
BL
15.0
16.70
1
5.0
26.9
22.3
P6SMBJ15A
LM
BM
15.0
16.70
1
5.0
24.4
24.0
P6SMBJ16
LN
BN
16.0
17.80
1
5.0
28.8
20.8
P6SMBJ16A
LP
BP
16.0
17.80
1
5.0
26.0
23.1
P6SMBJ17
LQ
BQ
17.0
18.90
1
5.0
30.5
19.7
P6SMBJ17A
LR
BR
17.0
18.90
1
5.0
27.6
21.7
P6SMBJ18
LS
BS
18.0
20.00
1
5.0
32.2
18.6
P6SMBJ18A
LT
BT
18.0
20.00
1
5.0
29.2
20.5
P6SMBJ20
LU
BU
20.0
22.20
1
5.0
35.8
16.7
P6SMBJ20A
LV
BV
20.0
22.20
1
5.0
32.4
18.5
P6SMBJ22
LW
BW
22.0
24.40
1
5.0
39.4
15.2
P6SMBJ22A
LX
BX
22.0
24.40
1
5.0
35.5
16.9
P6SMBJ24
LY
BY
24.0
26.70
1
5.0
43.0
14.0
P6SMBJ24A
LZ
BZ
24.0
26.70
1
5.0
38.9
15.4
P6SMBJ26
MD
CD
26.0
28.90
1
5.0
46.6
12.4
P6SMBJ26A
ME
CE
26.0
28.90
1
5.0
42.1
14.2
P6SMBJ28
MF
CF
28.0
31.10
1
5.0
50.0
12.0
P6SMBJ28A MG
CG
28.0
31.10
1
5.0
45.4
13.2
P6SMBJ30
MH
CH
30.0
33.30
1
5.0
53.5
11.2
P6SMBJ30A MK
CK
30.0
33.30
1
5.0
46.6
12.4
P6SMBJ33
ML
CL
33.0
36.70
1
5.0
59.0
10.2
P6SMBJ33A MM
CM
33.0
36.70
1
5.0
53.3
11.3
P6SMBJ36
MN
CN
36.0
40.00
1
5.0
64.3
9.3
P6SMBJ36A
MP
CP
36.0
40.00
1
5.0
58.1
10.3
P6SMBJ40
MQ
CQ
40.0
44.40
1
5.0
71.4
8.4
P6SMBJ40A MR
CR
40.0
44.40
1
5.0
64.5
9.3
* = Add "C" or "CA" suffix for bidirectional device types.
+ = For Bidirectional Types Having Vwm <= 10V, their Id limit is doubled.
# = See General Information for Impulse Current Waveform.
相关PDF资料 |
PDF描述 |
|---|---|
| P6SMBJ130CTRF | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| P6SMBJ15CATRF | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| P6SMBJ170CTRF | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| P6SMBJ110C | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| P6SMBJ150 | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| P6SMBJ11 | 功能描述:TVS 二极管 - 瞬态电压抑制器 8.92Vso 9.9Vbr 37A RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P6SMBJ110 | 功能描述:TVS 二极管 - 瞬态电压抑制器 89.2Vso 99Vbr 3.8A RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P6SMBJ110A | 功能描述:TVS 二极管 - 瞬态电压抑制器 94Vso 105Vbr 4A RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P6SMBJ110A-T3 | 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR |
| P6SMBJ110C | 功能描述:TVS 二极管 - 瞬态电压抑制器 89.2Vso 99Vbr 3.8A RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
发布紧急采购，3分钟左右您将得到回复。