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参数资料
| 型号： | PBSS2540E,115 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 40 V, 500 mA NPN low VCEsat (BISS) transistor; Package: SOT416 (SC-75); Container: Tape reel smd |
| 中文描述： | 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, SMD, SC-75, 3 PIN |
| 文件页数： | 2/11页 |
| 文件大小： | 110K |
| 代理商： | PBSS2540E,115 |
Philips Semiconductors
PBSS2540E
40 V, 500 mA NPN low VCEsat (BISS) transistor
9397 750 15063
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 4 May 2005
10 of 11
12. Data sheet status
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
13. Denitions
Short-form specication — The data in a short-form specication is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values denition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specication is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specied use without further testing or modication.
14. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notication (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specied.
15. Trademarks
Notice — All referenced brands, product names, service names and
trademarks are the property of their respective owners.
16. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales ofce addresses, send an email to: sales.addresses@www.semiconductors.philips.com
Level
Data sheet status [1]
Product status [2] [3]
Denition
I
Objective data
Development
This data sheet contains data from the objective specication for product development. Philips
Semiconductors reserves the right to change the specication in any manner without notice.
II
Preliminary data
Qualication
This data sheet contains data from the preliminary specication. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specication without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specication. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notication (CPCN).
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相关代理商/技术参数 |
参数描述 |
|---|---|
| PBSS2540F | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-490 |
| PBSS2540F,115 | 功能描述:两极晶体管 - BJT TRANS BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| PBSS2540M | 制造商:未知厂家 制造商全称:未知厂家 功能描述:40 V. 0.5 A NPN low VCEsat (BISS) transistor |
| PBSS2540M T/R | 功能描述:两极晶体管 - BJT TRANS BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| PBSS2540M,315 | 功能描述:两极晶体管 - BJT TRANS BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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