参数资料
型号: PBSS2540E,115
厂商: NXP SEMICONDUCTORS
元件分类: 小信号晶体管
英文描述: 40 V, 500 mA NPN low VCEsat (BISS) transistor; Package: SOT416 (SC-75); Container: Tape reel smd
中文描述: 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: PLASTIC, SMD, SC-75, 3 PIN
文件页数: 8/11页
文件大小: 110K
代理商: PBSS2540E,115
9397 750 15063
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 4 May 2005
6 of 11
Philips Semiconductors
PBSS2540E
40 V, 500 mA NPN low VCEsat (BISS) transistor
VCE =2V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = 55 °C
VCE =2V
(1) Tamb = 55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 3.
DC current gain as a function of collector
current; typical values
Fig 4.
Base-emitter voltage as a function of collector
current; typical values
IC/IB =20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = 55 °C
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 5.
Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 6.
Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa380
200
300
100
400
500
600
hFE
0
IC (mA)
10-1
103
102
110
(1)
(2)
(3)
006aaa381
500
700
300
900
1100
VBE
(mV)
100
IC (mA)
101
103
102
110
(1)
(2)
(3)
006aaa382
IC (mA)
101
103
102
110
101
1
VCEsat
(mV)
102
(1)
(2)
(3)
006aaa383
IC (mA)
101
103
102
110
101
1
VCEsat
(mV)
102
(1)
(2)
(3)
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PBSS2540F,115 功能描述:两极晶体管 - BJT TRANS BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
PBSS2540M 制造商:未知厂家 制造商全称:未知厂家 功能描述:40 V. 0.5 A NPN low VCEsat (BISS) transistor
PBSS2540M T/R 功能描述:两极晶体管 - BJT TRANS BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
PBSS2540M,315 功能描述:两极晶体管 - BJT TRANS BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2