- 您现在的位置：买卖IC网 > PDF目录3741 > PESD3V3L4UF,115 (NXP Semiconductors)DIODE QUAD ESD PROTECTION 6-XSON PDF资料下载
参数资料
| 型号： | PESD3V3L4UF,115 |
| 厂商： | NXP Semiconductors |
| 文件页数： | 10/17页 |
| 文件大小： | 0K |
| 描述： | DIODE QUAD ESD PROTECTION 6-XSON |
| 标准包装： | 5,000 |
| 电压 - 反向隔离（标准值）： | 3.3V |
| 电压 - 击穿： | 5.32V |
| 功率（瓦特）： | 30W |
| 电极标记： | 4 通道阵列 - 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-XFDFN |
| 供应商设备封装： | 6-XSON，SOT886（1.45x1） |
| 包装： | 带卷 (TR) |
NXP Semiconductors
PESDxL4UF/G/W
Low capacitance unidirectional quadruple ESD protection diode arrays
7. Application information
The devices are designed for the protection of up to four unidirectional data or signal lines
from the damage caused by ESD and surge pulses. The devices may be used on lines
where the signal polarities are both, positive and negative with respect to ground. The
devices provide a surge capability of 30 W per line for an 8/20 μ s waveform each.
data- or transmission lines
DUT
DUT
1
2
3
5
4
1
n.c. 2
3
5
4
unidirectional protection of 4 lines
bidirectional protection of 3 lines
006aab126
Fig 9. Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
PESDXL4UF_G_W_4
? NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 28 February 2008
10 of 17
相关PDF资料 |
PDF描述 |
|---|---|
| FLE-125-01-G-DV-K-TR | CONN SKT 1.27MM 50POS DUAL SMD |
| 3-1445050-0 | CONN HEADER 3MM 10POS TIN T/H |
| 3-1445093-0 | CONN HEADER 3MM 10POS GOLD T/H |
| 1-292250-1 | CONN HEADER 11POS R/A PCB TIN |
| 953138-2000-AR-PR | CONN SOCKET 38POS 2MM VERT SMD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| PESD3V3L4UG | 制造商:NXP Semiconductors 功能描述:DIODE TVS SOT-353 制造商:NXP Semiconductors 功能描述:DIODE, TVS, SOT-353 制造商:NXP Semiconductors 功能描述:UniDirect ESD protect diode,PESD3V3L4UG |
| PESD3V3L4UG T/R | 制造商:NXP Semiconductors 功能描述:ESD Suppressor TVS 20KV 5-Pin SOT-353 T/R |
| PESD3V3L4UG,115 | 功能描述:TVS二极管阵列 3.3V QUAD ESD PROTCT RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| PESD3V3L4UG115 | 制造商:NXP Semiconductors 功能描述:ESD DIODE 6W10V SOT-353 |
| PESD3V3L4UW | 制造商:NXP Semiconductors 功能描述:DIODE TVS SOT-665 制造商:NXP Semiconductors 功能描述:DIODE, TVS, SOT-665 制造商:NXP Semiconductors 功能描述:DIODE, TVS, SOT-665; TVS Polarity:Unidirectional; Reverse Stand-Off Voltage Vrwm:3.3V; Breakdown Voltage Min:5.32V; Breakdown Voltage Max:5.88V; Clamping Voltage Vc Max:5.6V; Peak Pulse Current Ippm:3A; Diode Case Style:SOT-665; No. ;RoHS Compliant: Yes |
发布紧急采购，3分钟左右您将得到回复。