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| 型号： | PESD5V0S1BL,315 |
| 厂商： | NXP Semiconductors |
| 文件页数： | 8/15页 |
| 文件大小： | 0K |
| 描述： | DIODE ESD PROTECT BIDIR SOD-882 |
| 产品培训模块： | ESD Standards and Products |
| 标准包装： | 10,000 |
| 电压 - 反向隔离（标准值）： | 5V |
| 电压 - 击穿： | 5.5V |
| 功率（瓦特）： | 130W |
| 电极标记： | 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOD-882 |
| 供应商设备封装： | SOD-882 |
| 包装： | 带卷 (TR) |
NXP Semiconductors
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
7. Application information
PESD5V0S1Bx series is designed for the protection of one bidirectional signal line from
the damage caused by ElectroStatic Discharge (ESD) and surge pulses. The devices may
be used on lines where the signal polarities are above and below ground. They provide a
surge capability of up to 130 W per line for a 8/20 μ s waveform.
signal line
PESD5V0S1Bx
GND
006aaa057
Fig 8.
Bidirectional protection of one signal line
Circuit board layout and protection device placement:
Circuit board layout is critical for the suppression of ESD, EFT and surge transients.
The following guidelines are recommended:
1. Place the protection device as close to the input terminal or connector as possible.
2. The path length between the protection device and the protected line should be
minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protection conductors in parallel with unprotected conductor.
5. Minimize all printed-circuit board conductive loops including power and ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer printed-circuit
boards, use ground vias.
PESD5V0S1BA_BB_BL_4
? NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 20 August 2009
8 of 15
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相关代理商/技术参数 |
参数描述 |
|---|---|
| PESD5V0S1BLD | 制造商:NXP Semiconductors 功能描述:DIODE BIRDIR ESD 5V SOD882D 制造商:NXP Semiconductors 功能描述:DIODE, BIRDIR, ESD, 5V, SOD882D |
| PESD5V0S1BLD,315 | 功能描述:ESD 抑制器 9.5 V 45 pF RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
| PESD5V0S1BSF | 制造商:NXP Semiconductors 功能描述:DIODE ESD 5V BIDIR 35PF SOD962 |
| PESD5V0S1BSF,315 | 功能描述:ESD 抑制器 8B MCU 10B A/D PWM BIDIRECTIONAL ESD RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
| PESD5V0S1BSF_11 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Ultra low profile bidirectional low capacitance ESD protection diode |
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