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| 型号： | PESD5V0S1BLD,315 |
| 厂商： | NXP Semiconductors |
| 文件页数： | 8/13页 |
| 文件大小： | 0K |
| 描述： | DIODE ESD PROTECTION SOD-882 |
| 标准包装： | 10,000 |
| 电压 - 反向隔离（标准值）： | 5V |
| 电压 - 击穿： | 5.5V |
| 功率（瓦特）： | 130W |
| 电极标记： | 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOD-882D |
| 供应商设备封装： | SOD882D |
| 包装： | 带卷 (TR) |
| 其它名称： | PESD5V0S1BLD315 |
NXP Semiconductors
PESD5V0S1BLD
Low capacitance bidirectional ESD protection diode
7. Application information
The PESD5V0S1BLD is designed for the protection of one bidirectional data or signal line
from the damage caused by ESD and surge pulses. The device may be used on lines
where the signal polarities are both, positive and negative with respect to ground. The
PESD5V0S1BLD provides a surge capability of 130 W per line for an 8/20 μ s waveform.
signal line
PESD5V0S1Bx
GND
006aaa057
Fig 10. Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors , and is
suitable for use in automotive applications.
PESD5V0S1BLD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 October 2010
? NXP B.V. 2010. All rights reserved.
8 of 13
相关PDF资料 |
PDF描述 |
|---|---|
| PESD5V0S1BSF,315 | DIODE BIDIR ESD PROT SOD962 |
| PESD5V0S1UJ,115 | DIODE ESD UNI-DIR 5.0V SOD-323F |
| PESD5V0S1ULD,315 | DIODE ESD PROTECTION SOD-882 |
| PESD5V0S2BT,215 | DIODE BIDIR ESD PROTECT SOT23 |
| PESD5V0S2UAT,215 | DIODE DBL ESD PROTECTION SOT23 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| PESD5V0S1BSF | 制造商:NXP Semiconductors 功能描述:DIODE ESD 5V BIDIR 35PF SOD962 |
| PESD5V0S1BSF,315 | 功能描述:ESD 抑制器 8B MCU 10B A/D PWM BIDIRECTIONAL ESD RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
| PESD5V0S1BSF_11 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Ultra low profile bidirectional low capacitance ESD protection diode |
| PESD5V0S1UA | 制造商:NXP Semiconductors 功能描述:DIODE ESD LOW CAPACITANCE SOD323 制造商:NXP Semiconductors 功能描述:DIODE, ESD, LOW CAPACITANCE, SOD323 制造商:NXP Semiconductors 功能描述:DIODE, ESD, LOW CAPACITANCE, SOD323, Diode Type:ESD Protection, Power Dissipatio 制造商:NXP Semiconductors 功能描述:DIODE, ESD, LOW CAPACITANCE, SOD323, Diode Type:ESD Protection, Power Dissipation Pd:360mW, Clamping Voltage Vc Max:19V, Diode Case Style:SOD-323, No. of Pins:2, MSL:MSL 1 - Unlimited , RoHS Compliant: Yes |
| PESD5V0S1UA,115 | 功能描述:TVS 二极管 - 瞬态电压抑制器 PROTECTION DIODE RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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