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| 型号： | PESD5V0S1UJ,115 |
| 厂商： | NXP Semiconductors |
| 文件页数： | 1/14页 |
| 文件大小： | 0K |
| 描述： | DIODE ESD UNI-DIR 5.0V SOD-323F |
| 标准包装： | 3,000 |
| 电压 - 反向隔离（标准值）： | 5V |
| 电压 - 击穿： | 6.2V |
| 功率（瓦特）： | 890W |
| 电极标记： | 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-90，SOD-323F |
| 供应商设备封装： | SOD-323F |
| 包装： | 带卷 (TR) |
PESD5V0S1UJ; PESD12VS1UJ
Unidirectional ESD protection for transient voltage
suppression
Rev. 01 — 3 June 2009
Product data sheet
1. Product pro?le
1.1 General description
Unidirectional ElectroStatic Discharge (ESD) protection diodes in a very small
Surface-Mounted Device (SMD) plastic package designed to protect one signal line
from the damage caused by ESD and transient overvoltage.
Table 1.
Product overview
Type number
Package
NXP
JEITA
Con?guration
PESD5V0S1UJ
SOD323F
SC-90
single
PESD12VS1UJ
1.2 Features
I Transient Voltage Suppression (TVS)
protection of one line
I Max. peak pulse power: P PP = 890 W
I Low clamping voltage: V CL = 19 V
I Low leakage current: I RM = 300 nA
1.3 Applications
I Computers and peripherals
I Audio and video equipment
I Cellular handsets and accessories
1.4 Quick reference data
Table 2. Quick reference data
T amb = 25 ° C unless otherwise speci?ed.
I ESD protection up to 30 kV
I IEC 61000-4-2; level 4 (ESD)
I IEC 61000-4-5 (surge); I PP = 47 A
I AEC-Q101 quali?ed
I Communication systems
I Portable electronics
I Medical and industrial equipment
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V RWM
reverse standoff voltage
C d
PESD5V0S1UJ
PESD12VS1UJ
diode capacitance
PESD5V0S1UJ
PESD12VS1UJ
f = 1 MHz; V R = 0 V
-
-
-
-
-
-
480
160
5
12
530
180
V
V
pF
pF
相关PDF资料 |
PDF描述 |
|---|---|
| PESD5V0S1ULD,315 | DIODE ESD PROTECTION SOD-882 |
| PESD5V0S2BT,215 | DIODE BIDIR ESD PROTECT SOT23 |
| PESD5V0S2UAT,215 | DIODE DBL ESD PROTECTION SOT23 |
| PESD5V0S4UD,115 | DIODE ARRAY ESD 5V 6-TSOP |
| PESD5V0S4UF,115 | DIODE QUAD ESD PROTECTION 6XSON |
相关代理商/技术参数 |
参数描述 |
|---|---|
| PESD5V0S1UL | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:ESD protection diodes in a SOD882 package |
| PESD5V0S1UL T/R | 功能描述:TVS 二极管 - 瞬态电压抑制器 SNGLE UNI ESD DIODES RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| PESD5V0S1UL,315 | 功能描述:TVS 二极管 - 瞬态电压抑制器 SNGLE UNI ESD DIODES RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| PESD5V0S1UL315 | 制造商:NXP Semiconductors 功能描述:DIODE ESD PROTECTION UNI SOD-882 |
| PESD5V0S1ULD | 制造商:NXP Semiconductors 功能描述:DIODE UNIDIR ESD 5V SOD882D 制造商:NXP Semiconductors 功能描述:DIODE, UNIDIR, ESD, 5V, SOD882D |
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