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参数资料
| 型号： | PESD5V2S2UT,215 |
| 厂商： | NXP Semiconductors |
| 文件页数： | 10/13页 |
| 文件大小： | 0K |
| 描述： | DIODE DBL ESD PROTECTION SOT23 |
| 产品培训模块： | ESD Protection Diodes ESD Standards and Products |
| 标准包装： | 3,000 |
| 电压 - 反向隔离（标准值）： | 5V |
| 电压 - 击穿： | 6.4V |
| 功率（瓦特）： | 260W |
| 电极标记： | 2 通道阵列 - 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 带卷 (TR) |
NXP Semiconductors
Double ESD protection diodes in SOT23
package
Product data sheet
PESDxS2UT series
APPLICATION INFORMATION
The PESDxS2UT series is designed for uni-directional protection for up to two lines against damage caused by
ElectroStatic Discharge (ESD) and surge pulses. The PESDxS2UT series may be used on lines where the signal
polarities are below ground. PESDxS2UT series provide a surge capability of up to 330 W (P pp ) per line for an 8/20 μ s
waveform.
line 1 to be protected
line 2 to be protected
PESDxS2UT
ground
unidirectional protection
of two lines
line 1 to be protected
PESDxS2UT
ground
bidirectional protection
of one line
001aaa491
Fig.10 Typical application: ESD protection of data lines.
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The
following guidelines are recommended:
? Place the PESDxS2UT as close as possible to the input terminal or connector.
? The path length between the PESDxS2UT and the protected line should be minimized.
? Keep parallel signal paths to a minimum.
? Avoid running protected conductors in parallel with unprotected conductors.
? Minimize all printed-circuit board conductive loops including power and ground loops.
? Minimize the length of transient return paths to ground.
? Avoid using shared return paths to a common ground point.
? Ground planes should be used whenever possible. For multilayer printed-circuit boards use ground vias.
2004 Apr 15
10
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| PESD5Z12 | 制造商:NXP Semiconductors 功能描述:DIODE TVS UNI 12V 200W SOD523 制造商:NXP Semiconductors 功能描述:DIODE, TVS, UNI, 12V, 200W, SOD523 制造商:NXP Semiconductors 功能描述:DIODE, TVS, UNI, 12V, 200W, SOD523; TVS Polarity:Unidirectional; Reverse Stand-Off Voltage Vrwm:12V; Breakdown Voltage Max:14.1V; Clamping Voltage Vc Max:35V; Peak Pulse Current Ippm:6A; Diode Case Style:SOD-523; No. of Pins:2 ;RoHS Compliant: Yes |
| PESD5Z12 T/R | 功能描述:TVS 二极管 - 瞬态电压抑制器 DIODE ARRAY ESD TAPE-7 RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| PESD5Z12,115 | 功能描述:TVS 二极管 - 瞬态电压抑制器 DIODE ARRAY ESD RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| PESD5Z2.5 | 制造商:NXP Semiconductors 功能描述:DIODE TVS UNI 2.5V 260W SOD523 制造商:NXP Semiconductors 功能描述:DIODE, TVS, UNI, 2.5V, 260W, SOD523 制造商:NXP Semiconductors 功能描述:DIODE, TVS, UNI, 2.5V, 260W, SOD523; TVS Polarity:Unidirectional; Reverse Stand-Off Voltage Vrwm:2.5V; Breakdown Voltage Max:4V; Clamping Voltage Vc Max:15V; Peak Pulse Current Ippm:20A; Diode Case Style:SOD-523; No. of Pins:2 ;RoHS Compliant: Yes |
| PESD5Z2.5 T/R | 功能描述:TVS 二极管 - 瞬态电压抑制器 DIODE ARRAY ESD TAPE-7 RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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