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参数资料
| 型号： | PESD5V2S2UT,215 |
| 厂商： | NXP Semiconductors |
| 文件页数： | 2/13页 |
| 文件大小： | 0K |
| 描述： | DIODE DBL ESD PROTECTION SOT23 |
| 产品培训模块： | ESD Protection Diodes ESD Standards and Products |
| 标准包装： | 3,000 |
| 电压 - 反向隔离（标准值）： | 5V |
| 电压 - 击穿： | 6.4V |
| 功率（瓦特）： | 260W |
| 电极标记： | 2 通道阵列 - 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 带卷 (TR) |
NXP Semiconductors
Double ESD protection diodes in SOT23
package
Product data sheet
PESDxS2UT series
FEATURES
QUICK REFERENCE DATA
? Uni-directional ESD protection of up to two lines
? Max. peak pulse power: P pp = 330 W at t p = 8/20 μ s
? Low clamping voltage: V (CL)R = 20 V at I pp = 18 A
SYMBOL
V RWM
PARAMETER
reverse stand-off
voltage
VALUE
3.3, 5.2, 12, 15
and 24
UNIT
V
? Ultra-low reverse leakage current: I RM < 700 nA
? ESD protection > 23 kV
? IEC 61000-4-2; level 4 (ESD)
? IEC 61000-4-5 (surge); I pp = 18 A at t p = 8/20 μ s.
APPLICATIONS
C d
PINNING
diode capacitance
V R = 0 V;
f = 1 MHz
number of
protected lines
207, 152, 38, 32 pF
and 23
2
? Computers and peripherals
? Communication systems
? Audio and video equipment
? High speed data lines
? Parallel ports.
DESCRIPTION
Uni-directional double ESD protection diodes in a SOT23
plastic package. Designed to protect up to two
transmission or data lines from ElectroStatic Discharge
PIN
1
2
3
1
DESCRIPTION
cathode 1
cathode 2
common anode
(ESD) damage.
3
1
MARKING
TYPE NUMBER
PESD3V3S2UT
PESD5V2S2UT
MARKING CODE (1)
*U9
*U1
2
001aaa490
2
sym022
3
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
Note
1. * = p : made in Hong Kong.
* = t : made in Malaysia.
* = W : made in China.
2004 Apr 15
*U2
*U3
*U4
2
Fig.1 Simplified outline (SOT23) and symbol.
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