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参数资料
| 型号： | PH2520U |
| 英文描述： | TrenchMOS (tm) ultra low level FET |
| 中文描述： | TrenchMOS（TM）超低水平场效应管 |
| 文件页数： | 6/12页 |
| 文件大小： | 233K |
| 代理商： | PH2520U |
Philips Semiconductors
PH2520U
TrenchMOS ultra low level FET
Product data
Rev. 01 — 02 May 2003
6 of 12
9397 750 11406
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 150
°
C; V
DS
>
I
D
x R
DSon
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 5.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
003aaa347
0
5
10
15
20
0
0.5
1
1.5
2
VDS (V)
ID
(A)
1.2 V
1.1 V
1.15 V
VGS = 1 V
1.25 V
1.3 V
4.5 V
003aaa348
0
10
20
30
40
50
0
0.5
1
1.5
2
VGS (V)
ID
(A)
T
j
= 150
°
C
25
°
C
003aaa349
0
2
4
6
8
10
0
5
10
15
20
ID (A)
RDSon
(m
)
4.5 V
2.5 V
1.5 V
1.3 V
03aa27
0
0.5
1
1.5
2
-60
0
60
120
180
Tj (
°
C)
a
a
R
R
DSon 25 C
)
----------------------------
=
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