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参数资料
| 型号： | PH28F128L18B85 |
| 厂商： | INTEL CORP |
| 元件分类： | PROM |
| 英文描述： | StrataFlash Wireless Memory |
| 中文描述： | 8M X 16 FLASH 1.8V PROM, 85 ns, PBGA56 |
| 封装： | 0.75 MM PITCH, LEAD FREE, VFBGA-56 |
| 文件页数： | 25/106页 |
| 文件大小： | 1272K |
| 代理商： | PH28F128L18B85 |
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Intel StrataFlash Wireless Memory (L18)
Datasheet
Intel StrataFlash Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
25
5.0
Maximum Ratings and Operating Conditions
5.1
Absolute Maximum Ratings
Warning:
Stressing the device beyond the “Absolute Maximum Ratings” may cause permanent damage.
These are stress ratings only.
5.2
Operating Conditions
Warning:
Operation beyond the “Operating Conditions” is not recommended and extended exposure beyond
the “Operating Conditions” may affect device reliability.
Parameter
Maximum Rating
Notes
Temperature under bias
–25 °C to +85 °C
Storage temperature
–65 °C to +125 °C
Voltage on any signal (except VCC, VPP)
–0.5 V to +2.5 V
1
VPP voltage
–0.2 V to +10 V
1,2,3
VCC voltage
–0.2 V to +2.5 V
1
VCCQ voltage
–0.2 V to +2.5 V
1
Output short circuit current
100 mA
4
Notes:
1.
Voltages shown are specified with respect to V
. Minimum DC voltage is –0.5 V on input/output
signals and –0.2 V on V
, V
, and V
. During transitions, this level may undershoot to –2.0 V for
periods < 20 ns. Maximum DC voltage on V
is V
+0.5 V, which, during transitions, may overshoot
to V
+2.0 V for periods < 20 ns. Maximum DC voltage on input/output signals and V
CCQ
is V
CCQ
+0.5 V, which, during transitions, may overshoot to V
+2.0 V for periods < 20 ns.
Maximum DC voltage on V
may overshoot to +14.0 V for periods < 20 ns.
Program/erase voltage is typically 1.7 V – 2.0 V. 9.0 V can be applied for 80 hours maximum total, to
any blocks for 1000 cycles maximum. 9.0 V program/erase voltage may reduce block cycling
capability.
Output shorted for no more than one second. No more than one output shorted at a time.
2.
3.
4.
Symbol
Parameter
Min
Max
Units
Notes
T
C
V
CC
Operating Temperature
VCC Supply Voltage
–25
1.7
1.7
1.35
0.9
8.5
-
100,000
-
-
+85
2.0
2.0
2.0
2.0
9.5
80
-
1000
2500
°C
1
V
V
CCQ
I/O Supply Voltage
1.8 V Range
1.8 V Extended Range
V
PPL
V
PPH
t
PPH
V
PP
Voltage Supply (Logic Level)
Factory word programming V
PP
Maximum VPP Hours
Main and Parameter Blocks
Main Blocks
Parameter Blocks
2
V
PP
= V
PPH
V
PP
=
V
CC
V
PP
= V
PPH
V
PP
= V
PPH
Hours
Block
Erase
Cycles
Cycles
Notes:
1.
2.
T
= Case temperature
In typical operation, the VPP program voltage is V
. VPP can be connected to 8.5 V – 9.5 V for 1000
cycles on main blocks and 2500 cycles on parameter blocks.
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相关代理商/技术参数 |
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|---|---|
| PH28F128L18B85A | 制造商:Micron Technology Inc 功能描述:128MB, TYAX .75 VFBGA 1.8 LF - Trays |
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| PH28F128W18BD60A | 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel 1.8V 128Mbit 8M x 16bit 60ns 56-Pin VFBGA Tray |
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| PH28F256L18B85 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:StrataFlash Wireless Memory |
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