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参数资料
| 型号： | PHP52N06T |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 52 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | PLASTIC, SC-46, 3 PIN |
| 文件页数： | 3/12页 |
| 文件大小： | 104K |
| 代理商： | PHP52N06T |
Philips Semiconductors
PHP52N06T
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 — 9 January 2002
3 of 12
9397 750 09121
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
V
GS
≥
4.5 V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
T
mb
= 25
°
C; I
DM
single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa16
0
40
80
120
0
50
100
150
200
T
mb
(
o
C)
P
der
(%)
03aa24
0
40
80
120
0
50
100
150
200
T
mb
(
o
C)
I
der
(%)
P
der
P
P
tot 25 C
°
)
-----------------------
100
%
×
=
I
der
I
D 25 C
°
)
-------------------
100
%
×
=
03ag58
1
10
10
2
10
3
1
10
10
2
V
DS
(V)
I
D
(A)
DC
100 ms
R
DSon
= V
DS
/ I
D
10 ms
t
p
= 10 μs
1 ms
100 μs
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| PHP52N06T,127 | 功能描述:MOSFET RAIL MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| PHP54N06T,127 | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| PHP55N03LT | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor Logic level FET |
| PHP55N03LTA | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor |
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