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参数资料
| 型号： | PHP52N06T |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 52 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | PLASTIC, SC-46, 3 PIN |
| 文件页数： | 9/12页 |
| 文件大小： | 104K |
| 代理商： | PHP52N06T |
Philips Semiconductors
PHP52N06T
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 — 9 January 2002
9 of 12
9397 750 09121
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9.
Package outline
Fig 14. SOT78 (TO-220AB).
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT78
SC-46
3-lead TO-220AB
D
D1
q
p
L
1
2
3
L1
(1)
b1
e
e
b
0
5
10 mm
scale
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
DIMENSIONS (mm are the original dimensions)
A
E
A1
c
Note
1. Terminals in this zone are not tinned.
Q
L2
UNIT
A1
b1
D1
e
p
mm
2.54
q
Q
A
b
D
c
L2
max.
3.0
3.8
3.6
15.0
13.5
3.30
2.79
3.0
2.7
2.6
2.2
0.7
0.4
15.8
15.2
0.9
0.7
1.3
1.0
4.5
4.1
1.39
1.27
6.4
5.9
10.3
9.7
L1
(1)
E
L
00-09-07
01-02-16
mounting
base
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相关代理商/技术参数 |
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| PHP52N06T,127 | 功能描述:MOSFET RAIL MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| PHP54N06T | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| PHP54N06T,127 | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| PHP55N03LT | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor Logic level FET |
| PHP55N03LTA | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor |
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