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参数资料
| 型号： | PHP55N03LTA |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 55 A, 25 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | PLASTIC, SC-46, 3 PIN |
| 文件页数： | 4/14页 |
| 文件大小： | 296K |
| 代理商： | PHP55N03LTA |
Philips Semiconductors
PHP55N03LTA series
N-channel enhancement mode field-effect transistor
Product data
Rev. 02 — 2 August 2001
4 of 14
9397 750 08642
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
7.
Thermal characteristics
7.1 Transient thermal impedance
Table 4:
Symbol Parameter
R
th(j-mb)
thermal resistance from junction to mounting
base
R
th(j-a)
thermal resistance from junction to ambient
Thermal characteristics
Conditions
Figure 4
Value
1.75
Unit
K/W
vertical in still air; SOT78 package
mounted on a printed circuit board; minimum
footprint; SOT404 and SOT428 packages
60
50
K/W
K/W
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration.
03ae63
10
-2
10
-1
1
10
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
Z
th(j-mb)
(K/W)
single pulse
δ
= 0.5
0.2
0.1
0.05
0.02
tp
tp
T
T
P
t
δ
=
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| PHB55N03LTA | N-channel enhancement mode field-effect transistor |
| PHD55N03LTA | N-channel enhancement mode field-effect transistor |
| PHP55N03T | TrenchMOS transistor Standard Level FET(TrenchMOS 晶体管标准电平场效应管) |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| PHP55N03LTA,127 | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| PHP55N03T | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET |
| PHP55N04LT | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 35V V(BR)DSS | 55A I(D) | TO-220AB |
| PHP5N20E | 制造商:DANAHER - INDUSTRIAL/SPECIALTY 功能描述:LS-7 316 Stainless Steel, Polypropylene, TFE, .55 Sp. Gr, 100 PSI @ 70 F |
| PHP5N40 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:PowerMOS transistor |
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