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参数资料
| 型号： | PHP55N03LTA |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 55 A, 25 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | PLASTIC, SC-46, 3 PIN |
| 文件页数： | 8/14页 |
| 文件大小： | 296K |
| 代理商： | PHP55N03LTA |
Philips Semiconductors
PHP55N03LTA series
N-channel enhancement mode field-effect transistor
Product data
Rev. 02 — 2 August 2001
8 of 14
9397 750 08642
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
T
j
= 25
°
C and 175
°
C; V
GS
= 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
I
D
= 55 A; V
DD
= 15 V
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
03ae69
0
15
30
45
60
0
0.4
0.8
1.2
V
SD
(V)
I
S
(A)
T
j
= 25 oC
175 oC
V
GS
= 0 V
03ae71
0
2
4
6
8
10
0
10
20
30
40
Q
G
(nC)
V
GS
(V)
I
D
= 55 A
T
j
= 25 oC
V
DD
= 15 V
相关PDF资料 |
PDF描述 |
|---|---|
| PHB55N03LTA | N-channel enhancement mode field-effect transistor |
| PHD55N03LTA | N-channel enhancement mode field-effect transistor |
| PHP55N03T | TrenchMOS transistor Standard Level FET(TrenchMOS 晶体管标准电平场效应管) |
| PHP5N20E | PowerMOS transistor |
| PHP5N40E | PowerMOS transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| PHP55N03LTA,127 | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| PHP55N03T | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET |
| PHP55N04LT | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 35V V(BR)DSS | 55A I(D) | TO-220AB |
| PHP5N20E | 制造商:DANAHER - INDUSTRIAL/SPECIALTY 功能描述:LS-7 316 Stainless Steel, Polypropylene, TFE, .55 Sp. Gr, 100 PSI @ 70 F |
| PHP5N40 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:PowerMOS transistor |
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