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参数资料
| 型号： | PHP60N06LT |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | TrenchMOS transistor Logic level FET |
| 中文描述： | 58 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | PLASTIC, TO-220AB, 3 PIN |
| 文件页数： | 3/9页 |
| 文件大小： | 71K |
| 代理商： | PHP60N06LT |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
PHP60N06LT, PHB60N06LT
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL PARAMETER
I
S
Continuous source current
(body diode)
I
SM
Pulsed source current (body
diode)
V
SD
Diode forward voltage
CONDITIONS
MIN.
-
TYP. MAX. UNIT
-
58
A
-
-
232
A
I
F
= 25 A; V
GS
= 0 V
I
F
= 40 A; V
GS
= 0 V
I
F
= 40 A; -dI
/dt = 100 A/
μ
s;
V
GS
= -10 V; V
R
= 30 V
-
-
-
-
0.95
1.0
47
0.15
1.2
-
-
-
V
V
ns
μ
C
t
rr
Q
rr
Reverse recovery time
Reverse recovery charge
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER
W
DSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
I
D
= 45 A; V
≤
25 V; V
GS
= 5 V;
R
GS
= 50
; T
mb
= 25 C
MIN.
-
MAX.
110
UNIT
mJ
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
mb
); conditions: V
GS
≥
5 V
0
20
40
60
80
Tmb / C
100
120
140
160
180
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
Tmb / C
100
120
140
160
180
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
January 1998
3
Rev 1.300
相关PDF资料 |
PDF描述 |
|---|---|
| PHB60N06LT | TrenchMOS transistor Logic level FET |
| PHP60N06T | TrenchMOS transistor Standard level FET |
| PHP65N06LT | TrenchMOS transistor Logic level FET |
| PHP65N06T | TrenchMOS transistor Standard level FET |
| PHP69N03T | TrenchMOS transistor Standard Level FET(TrenchMOS 晶体管标准电平场效应管) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| PHP60N06T | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET |
| PHP63NQ03LT | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| PHP63NQ03LT,127 | 功能描述:MOSFET PHP63NQ03LT/SOT78/RAILH// RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| PHP63NQ03LT | 制造商:NXP Semiconductors 功能描述:MOSFET N 30V TO-220 |
| PHP65N06LT | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:TrenchMOS transistor Logic level FET |
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