参数资料
型号: PIC16F716-E/SO
厂商: Microchip Technology
文件页数: 130/136页
文件大小: 0K
描述: IC PIC MCU FLASH 2KX14 18SOIC
产品培训模块: Asynchronous Stimulus
标准包装: 42
系列: PIC® 16F
核心处理器: PIC
芯体尺寸: 8-位
速度: 20MHz
外围设备: 欠压检测/复位,POR,PWM,WDT
输入/输出数: 13
程序存储器容量: 3.5KB(2K x 14)
程序存储器类型: 闪存
RAM 容量: 128 x 8
电压 - 电源 (Vcc/Vdd): 3 V ~ 5.5 V
数据转换器: A/D 4x8b
振荡器型: 内部
工作温度: -40°C ~ 125°C
封装/外壳: 18-SOIC(0.295",7.50mm 宽)
包装: 管件
配用: I3-DB16F716-ND - BOARD DAUGHTER ICEPIC3
AC162054-ND - HEADER INTERFACE ICD2 16F716
2007 Microchip Technology Inc.
DS41206B-page 91
PIC16F716
12.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings()
Ambient temperature under bias......................................................................................................... .-55°C to +125°C
Storage temperature ........................................................................................................................... -65°C to +150°C
Voltage on any pin with respect to VSS (except VDD, MCLR, and RA4) ....................................... -0.3V to (VDD +0.3V)
Voltage on VDD with respect to VSS ...................................................................................................... -0.3V to +7.5V
Voltage on MCLR with respect to VSS (Note 2) ...................................................................................... 0V to +13.25V
Voltage on RA4 with respect to Vss ............................................................................................................ 0V to +8.5V
Total power dissipation (Note 1) (PDIP and SOIC)................................................................................................ 1.0W
Total power dissipation (Note 1) (SSOP) ............................................................................................................. 0.65W
Maximum current out of VSS pin ........................................................................................................................ 300 mA
Maximum current into VDD pin ...........................................................................................................................250 mA
Input clamp current, IIK (VI < 0 or VI > VDD)
...................................................................................................................±20 mA
Output clamp current, IOK (VO < 0 or VO > VDD)
...........................................................................................................±20 mA
Maximum output current sunk by any I/O pin....................................................................................................... 25 mA
Maximum output current sourced by any I/O pin ................................................................................................. 25 mA
Maximum current sunk by PORTA and PORTB (combined).............................................................................. 200 mA
Maximum current sourced by PORTA and PORTB (combined) ........................................................................ 200mA
Note 1: Power dissipation is calculated as follows: Pdis = VDD x {IDD -
∑ IOH} + ∑ {(VDD-VOH) x IOH} + ∑(VOl x IOL)
2: Voltage spikes below VSS at the MCLR/VPP pin, inducing currents greater than 80 mA, may cause latch-up.
Thus, a series resistor of 50-100
Ω should be used when applying a “low” level to the MCLR/VPP pin rather
than pulling this pin directly to VSS.
NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
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