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参数资料
| 型号： | PM75DSA120 |
| 厂商： | Mitsubishi Electric Corporation |
| 英文描述： | FLAT-BASE TYPE INSULATED PACKAGE |
| 中文描述： | 平性基地型绝缘包装 |
| 文件页数： | 1/6页 |
| 文件大小： | 62K |
| 代理商： | PM75DSA120 |
Sep.1998
Description:
Mitsubishi Intelligent Power Mod-
ules are isolated base modules de-
signed for power switching applica-
tions operating at frequencies to
20kHz. Built-in control circuits pro-
vide optimum gate drive and pro-
tection for the IGBT and free-wheel
diode power devices.
Features:
u
Complete Output Power
Circuit
u
Gate Drive Circuit
u
Protection Logic
– Short Circuit
– Over Current
– Over Temperature
– Under Voltage
Applications:
u
Inverters
u
UPS
u
Motion/Servo Control
u
Power Supplies
Ordering Information:
Example: Select the complete
part number from the table below
-i.e. PM75DSA120 is a 1200V,
75 Ampere Intelligent Power Mod-
ule.
Type
Current Rating
Amperes
V
CES
Volts (x 10)
PM
75
120
Dimensions
Inches
Millimeters
A
4.33
110.0
B
3.66
±
0.010
1.77
93.0
±
0.25
45.0
C
D
1.34
34.0
E
1.14 +0.04/-0.02 29.0 +1/-0.5
F
1.02
26.0
G
0.98
25.0
H
0.702
17.84
J
0.55
14.0
K
0.51
13.0
Dimensions
Inches
Millimeters
L
0.47
12.0
M
0.33
8.5
N
0.28
7.0
P
0.230
5.84
Q
0.22 Dia.
Dia. 5.5
R
M5 Metric
M5
S
0.100
2.54
T
0.08 Dia.
Dia. 2.0
U
0.08
2.0
Outline Drawing and Circuit Diagram
MITSUBISHI INTELLIGENT POWER MODULES
PM75DSA120
FLAT-BASE TYPE
INSULATED PACKAGE
N
J
1.
2.
3.
4.
5.
1.
2.
3.
4.
5.
F
E
K
H
0.64 MM SQ. PIN
(10 TYP.)
SNR
CN1
VNC
FNO
VN1
VP1
SPR
CP1
VPC
FPO
N SIDE
P SIDE
E2
SINK
SENS
OUT2
OUT1
GND
TEMP
C2E1
IN
VCC
VNC
SR
FO
CN1
SNR
FNO
VN1
SINK
SENS
OUT2
OUT1
GND
TEMP
VCC
FO
SR
IN
VP1
FPO
SPR
CP1
VPC
C1
L
U
M
G
G
G
B
A
D
C
P
S
S
S
S
1
P
N
3 4 5
C2E1
E2
C1
2
1
2 3 4 5
T - DIA.
(4 TYP.)
Q - DIA.
(2 TYP.)
R - M5 THD.
(3 TYP.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| PM75RHA060 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) |
| PM75RL1A060 | 制造商:Powerex Power Semiconductors 功能描述:MOD IPM 7-PAC L1 75A 600V 制造商:Powerex Power Semiconductors 功能描述:INTELLIGENT POWER MODULE, IGBT, 75A, 600V, MODULE; IPM Power Device:IGBT; Voltage Rating (Vces / Vdss):600V; Current Rating (Ic / Id):75A; Isolation Voltage:2.5kV; IPM Series:Intellimod L1 制造商:Mitsubishi Electric 功能描述:POWER IPM TRANSISTOR |
| PM75RL1A120 | 制造商:Powerex Power Semiconductors 功能描述:MOD IPM 7-PAC L1 75A 1200V 制造商:Powerex Power Semiconductors 功能描述:IGBT MODULE, 1.2KV, 75A, Transistor Polarity:N Channel, DC Collector Current:75A, Collector Emitter Voltage Vces:1.2kV, Power Dissipation Pd:595W, Collector Emitter Voltage V(br)ceo:1.2kV, Operating Temperature Min:-20C , RoHS Compliant: Yes 制造商:Powerex Power Semiconductors 功能描述:IPM MODULE L1-SERIES 制造商:Mitsubishi Electric 功能描述:POWER IPM TRANSISTOR |
| PM75RL1B060 | 制造商:Powerex Power Semiconductors 功能描述:MOD IPM 7-PAC L1 75A 600V 制造商:Powerex Power Semiconductors 功能描述:IGBT MODULE, 600V, 75A; Transistor Polarity:N Channel; DC Collector Current:75A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:337W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Min:-20C; No. of Pins:37;RoHS Compliant: Yes 制造商:Mitsubishi Electric 功能描述:POWER IPM TRANSISTOR 制造商:Powerex Power Semiconductors 功能描述:POWER IPM TRANSISTOR |
| PM75RL1B120 | 制造商:Powerex Power Semiconductors 功能描述:MOD IPM 7-PAC L1 75A 1200V 制造商:Powerex Power Semiconductors 功能描述:IGBT MODULE, 1.2KV, 75A, Transistor Polarity:N Channel, DC Collector Current:75A, Collector Emitter Voltage Vces:1.2kV, Power Dissipation Pd:595W, Collector Emitter Voltage V(br)ceo:1.2kV, Operating Temperature Min:-20C , RoHS Compliant: Yes 制造商:Powerex Power Semiconductors 功能描述:IPM MODULE L1-SERIES 制造商:Mitsubishi Electric 功能描述:POWER IPM TRANSISTOR |
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