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参数资料
| 型号： | PM75DSA120 |
| 厂商： | Mitsubishi Electric Corporation |
| 英文描述： | FLAT-BASE TYPE INSULATED PACKAGE |
| 中文描述： | 平性基地型绝缘包装 |
| 文件页数： | 6/6页 |
| 文件大小： | 62K |
| 代理商： | PM75DSA120 |
Sep.1998
MITSUBISHI INTELLIGENT POWER MODULES
PM75DSA120
FLAT-BASE TYPE
INSULATED PACKAGE
0
60
80
100
120
140
FATEMPERATURE (TYPICAL)
JUNCTION TEMPERATURE, T
j
, (
o
C)
IMPETRA(Each FWDi)
F
-50
0
50
100
150
V
D
= 15V
11
12
13
14
15
CLEVEL TEMPERATURE DEPENDENCY
(TYPICAL)
JUNCTION TEMPERATURE, T
j
, (
o
C)
U
U
t
,
r
,
-50
150
0
50
100
UV
t
UV
r
0
TIME, (s)
T
t
,
TRANSIENT THERMAL
IMPEDAN(Each IGBT)
10
1
10
-1
10
0
10
1
10
0
10
-1
10
-2
10
-3
SINGLE PULSE
STANDARD VALUE = R
th(j-c)Q
= 0.27
o
C/W
10
-2
10
-3
TIME, (s)
T
t
,
10
1
10
-1
10
0
10
1
10
0
10
-1
10
-2
10
-3
SINGLE PULSE
STANDARD VALUE = R
th(j-c)F
= 0.51
o
C/W
10
-2
10
-3
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相关代理商/技术参数 |
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| PM75RHA060 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) |
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| PM75RL1A120 | 制造商:Powerex Power Semiconductors 功能描述:MOD IPM 7-PAC L1 75A 1200V 制造商:Powerex Power Semiconductors 功能描述:IGBT MODULE, 1.2KV, 75A, Transistor Polarity:N Channel, DC Collector Current:75A, Collector Emitter Voltage Vces:1.2kV, Power Dissipation Pd:595W, Collector Emitter Voltage V(br)ceo:1.2kV, Operating Temperature Min:-20C , RoHS Compliant: Yes 制造商:Powerex Power Semiconductors 功能描述:IPM MODULE L1-SERIES 制造商:Mitsubishi Electric 功能描述:POWER IPM TRANSISTOR |
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| PM75RL1B120 | 制造商:Powerex Power Semiconductors 功能描述:MOD IPM 7-PAC L1 75A 1200V 制造商:Powerex Power Semiconductors 功能描述:IGBT MODULE, 1.2KV, 75A, Transistor Polarity:N Channel, DC Collector Current:75A, Collector Emitter Voltage Vces:1.2kV, Power Dissipation Pd:595W, Collector Emitter Voltage V(br)ceo:1.2kV, Operating Temperature Min:-20C , RoHS Compliant: Yes 制造商:Powerex Power Semiconductors 功能描述:IPM MODULE L1-SERIES 制造商:Mitsubishi Electric 功能描述:POWER IPM TRANSISTOR |
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