参数资料
型号: PMEG3005EJ,115
厂商: NXP Semiconductors
文件页数: 7/13页
文件大小: 131K
描述: SCHOTTKY RECT 30V 0.5A SOD323F
产品目录绘图: SOD-323 Circuit
标准包装: 3,000
二极管类型: 肖特基
电压 - (Vr)(最大): 30V
电流 - 平均整流 (Io): 500mA(DC)
电压 - 在 If 时为正向 (Vf)(最大): 430mV @ 500mA
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 150µA @ 30V
电容@ Vr, F: 70pF @ 1V,1MHz
安装类型: 表面贴装
封装/外壳: SC-90,SOD-323F
供应商设备封装: SOD-323F
包装: 带卷 (TR)
PMEGXX05EH_EJ_SER_2
? NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 13 January 2010 3 of 13
NXP Semiconductors
PMEGxx05EH/EJ series
0.5 A very low VF
MEGA Schottky barrier rectifiers
4. Marking
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
Table 5. Marking codes
Type number
Marking code
PMEG2005EH A3
PMEG3005EH A4
PMEG4005EH A5
PMEG2005EJ CC
PMEG3005EJ CD
PMEG4005EJ CE
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VR
reverse voltage
PMEG2005EH,
PMEG2005EJ
-20V
PMEG3005EH,
PMEG3005EJ
-30V
PMEG4005EH,
PMEG4005EJ
-40V
IF
forward current Tsp
55
°C-0.5A
IFRM
repetitive peak forward current tp
1 ms; δ≤0.25 - 7 A
IFSM
non-repetitive peak forward
current
t = 8 ms square
wave
-10A
Ptot
total power dissipation Tamb
25
°C
SOD123F
[1]
-375mW
[2]
-830mW
SOD323F
[1]
-360mW
[2]
-830mW
Tj
junction temperature - 150
°C
Tamb
ambient temperature
?65 +150
°C
Tstg
storage temperature
?65 +150
°C
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