参数资料
型号: PMEG3010BER,115
厂商: NXP Semiconductors
文件页数: 7/13页
文件大小: 91K
描述: SCHOTTKY RECT 30V 1.0A SOD-123W
标准包装: 1
二极管类型: 肖特基
电压 - (Vr)(最大): 30V
电流 - 平均整流 (Io): 1A
电压 - 在 If 时为正向 (Vf)(最大): 450mV @ 1A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 50µA @ 30V
电容@ Vr, F: 170pF @ 1V,1MHz
安装类型: 表面贴装
封装/外壳: SOD-123W
供应商设备封装: SOD123W
包装: 标准包装
其它名称: 568-6512-6
PMEG3010BER_1
? NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 20 April 2009 3 of 13
NXP Semiconductors
PMEG3010BER
1 A low VF
MEGA Schottky barrier recti?er
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Tj
=25°C prior to surge.
[3] Re?ow soldering is the only recommended soldering method.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6. Thermal characteristics
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR
are a signi?cant part of the total power losses.
[2] Re?ow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[6] Soldering point of cathode tab.
Tj
junction temperature - 150°C
Tamb
ambient temperature
?55 +150
°C
Tstg
storage temperature
?65 +150
°C
Table 5. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance fromin free air
junction to ambient
[1][2]
[3]- - 220 K/W
[4]- - 130 K/W
[5]--70K/W
Rth(j-sp)
thermal resistance from
junction to solder point
[6]
--18K/W
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