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参数资料
| 型号： | PN2222A |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | General Purpose Transistors NPN Silicon(NPN通用晶体管) |
| 中文描述： | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | CASE 29-11, TO-226AA, 3 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 202K |
| 代理商： | PN2222A |
PN2222, PN2222A
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector
Emitter Breakdown Voltage
(I
C
= 10 mAdc, I
B
= 0)
PN2222
PN2222A
V
(BR)CEO
30
40
Vdc
Collector
Base Breakdown Voltage
(I
C
= 10 Adc, I
E
= 0)
PN2222
PN2222A
V
(BR)CBO
60
75
Vdc
Emitter
Base Breakdown Voltage
(I
E
= 10 Adc, I
C
= 0)
PN2222
PN2222A
V
(BR)EBO
5.0
6.0
Vdc
Collector Cutoff Current
(V
CE
= 60 Vdc, V
EB(off)
= 3.0 Vdc)
PN2222A
I
CEX
10
nAdc
Collector Cutoff Current
(V
CB
= 50 Vdc, I
E
= 0)
(V
CB
= 60 Vdc, I
E
= 0)
(V
CB
= 50 Vdc, I
E
= 0, T
A
= 125
°
C)
(V
CB
= 50 Vdc, I
E
= 0, T
A
= 125
°
C)
Emitter Cutoff Current
(V
EB
= 3.0 Vdc, I
C
= 0)
PN2222
PN2222A
PN2222
PN2222A
I
CBO
0.01
0.01
10
10
Adc
PN2222A
I
EBO
100
nAdc
Base Cutoff Current
(V
CE
= 60 Vdc, V
EB(off)
= 3.0 Vdc)
PN2222A
I
BL
20
nAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 10 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, T
=
55
°
C)
(I
C
= 150 mAdc, V
CE
= 10 Vdc) (Note 1)
(I
C
= 150 mAdc, V
CE
= 1.0 Vdc) (Note 1)
(I
C
= 500 mAdc, V
CE
= 10 Vdc) (Note 1)
PN2222A only
PN2222
PN2222A
h
FE
35
50
75
35
100
50
30
40
300
Collector
Emitter Saturation Voltage (Note 1)
(I
C
= 150 mAdc, I
B
= 15 mAdc)
PN2222
PN2222A
PN2222
PN2222A
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
CE(sat)
0.4
0.3
1.6
1.0
Vdc
Base
Emitter Saturation Voltage (Note 1)
(I
C
= 150 mAdc, I
B
= 15 mAdc)
PN2222
PN2222A
PN2222
PN2222A
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
BE(sat)
0.6
1.3
1.2
2.6
2.0
Vdc
SMALL
SIGNAL CHARACTERISTICS
Current
Gain
Bandwidth Product (Note 2)
(I
C
= 20 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
PN2222
PN2222A
f
T
250
300
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
8.0
pF
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
PN2222
PN2222A
C
ibo
30
25
pF
Input Impedance
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
PN2222A
PN2222A
h
ie
2.0
0.25
8.0
1.25
k
Voltage Feedback Ratio
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
PN2222A
PN2222A
h
re
8.0
4.0
X 10
4
Small
Signal Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
1. Pulse Test: Pulse Width
2. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
PN2222A
PN2222A
h
fe
50
75
300
375
300 s, Duty Cycle
2.0%.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| PN2222A AMO | 功能描述:两极晶体管 - BJT TRANS SW WIDE PITCH RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| PN2222A BULK | 制造商:MCC 功能描述:General Purpose NPN Through Hole Transistor TO-92 Bulk |
| PN2222A T/R | 功能描述:两极晶体管 - BJT TRANS SW TAPE WIDE PITCH RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| PN2222A,116 | 功能描述:两极晶体管 - BJT TRANS SW TAPE WIDE PITCH RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| PN2222A,126 | 功能描述:两极晶体管 - BJT TRANS SW AMMO WIDE PITCH RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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