参数资料
型号: PN2222A
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: General Purpose Transistors NPN Silicon(NPN通用晶体管)
中文描述: 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封装: CASE 29-11, TO-226AA, 3 PIN
文件页数: 3/7页
文件大小: 202K
代理商: PN2222A
PN2222, PN2222A
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
SMALL
SIGNAL CHARACTERISTICS
Output Admittance
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
PN2222A
PN2222A
h
oe
5.0
25
35
200
Mhos
Collector Base Time Constant
(I
E
= 20 mAdc, V
CB
= 20 Vdc, f = 31.8 MHz)
PN2222A
rb
C
c
150
ps
Noise Figure
(I
C
= 100 Adc, V
CE
= 10 Vdc, R
S
= 1.0 k , f = 1.0 kHz)
PN2222A
NF
4.0
dB
SWITCHING CHARACTERISTICS (PN2222A only)
Delay Time
(V
CC
= 30 Vdc, V
BE(off)
=
0.5 Vdc,
I
C
= 150 mAdc, I
B1
= 15 mAdc) (Figure 1)
t
d
t
r
t
s
t
f
10
ns
Rise Time
25
ns
Storage Time
(V
CC
= 30 Vdc, I
C
= 150 mAdc,
I
B1
= I
B2
= 15 mAdc) (Figure 2)
225
ns
Fall Time
60
ns
Figure 1. Turn
On Time
Figure 2. Turn
Off Time
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
+16 V
2 V
< 2 ns
0
1.0 to 100 s,
DUTY CYCLE
2.0%
1 k
+30 V
200
C
S
* < 10 pF
+16 V
14 V
0
< 20 ns
1.0 to 100 s,
DUTY CYCLE
2.0%
1 k
+30 V
200
C
S
* < 10 pF
4 V
1N914
相关PDF资料
PDF描述
PN2907ARLRA General Purpose Transistor
PN2907A SMALL SIGNAL PNP TRANSISTOR
PN2907A-AP SMALL SIGNAL PNP TRANSISTOR
PN2907A Small Signal Transistors
PN2907A PNP Medium Power Transistor (Switching)
相关代理商/技术参数
参数描述
PN2222A AMO 功能描述:两极晶体管 - BJT TRANS SW WIDE PITCH RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
PN2222A BULK 制造商:MCC 功能描述:General Purpose NPN Through Hole Transistor TO-92 Bulk
PN2222A T/R 功能描述:两极晶体管 - BJT TRANS SW TAPE WIDE PITCH RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
PN2222A,116 功能描述:两极晶体管 - BJT TRANS SW TAPE WIDE PITCH RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
PN2222A,126 功能描述:两极晶体管 - BJT TRANS SW AMMO WIDE PITCH RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2