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参数资料
| 型号： | PNA2W01 |
| 英文描述： | PHOTOTRANSISTOR | DARLINGTON | 800NM PEAK WAVELENGTH | 30M | LED-8B |
| 中文描述： | 光电晶体管|达林顿| 800NM峰值波长| 3000万|发光二极管- 8B条 |
| 文件页数： | 1/2页 |
| 文件大小： | 45K |
| 代理商： | PNA2W01 |
1
PNA2W01
Darlington Phototransistor
For optical control systems
Features
High sensitivity
Easy to combine with red and infrared light emitting diodes
Small size designed for easier mounting to printed circuit board
Darlington Phototransistors
50
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
Sig.IN
R
L
V
CC
Sig.OUT
(Input pulse)
(Output pulse)
10%
90%
t
d
t
r
t
f
2.8
±
0.2
3.2
±
0.3
0
±
0
0
45
1
2
10.0 min.
Type number : Emitter mark (Black)
10.0 min.
3.2
±
0.3
1.8
1.8
(
(
0
±
0
2
±
0
2
±
0
1
±
0
0
±
R0.9
1.8
1: Collector
2: Emitter
Unit : mm
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
V
CEO
V
ECO
I
C
P
C
T
opr
T
stg
Ratings
20
5
30
100
–25 to +85
–30 to +100
Unit
V
V
mA
mW
C
C
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
I
CEO
I
CE(L)
λ
P
θ
t
r
, t
f*2
V
CE(sat)
Conditions
min
typ
0.1
3
800
18
200
0.7
max
0.5
Unit
μ
A
mA
nm
deg.
μ
s
V
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
Response time
Collector saturation voltage
V
CE
= 10V
V
CE
= 10V, L = 2 lx
*1
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
CE(L)
= 5mA, R
L
= 100
I
CE(L)
= 1mA, L = 100 lx
*1
0.5
1.5
*1
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2
Switching time measurement circuit
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| PNA2W01M | 功能描述:NPN PHOTOTRANS 800NM DOUBLE END RoHS:是 类别:传感器，转换器 >> 光学 - 光电检测器 - 光电晶体管 系列:* 标准包装:1,200 系列:- 电压 - 集电极发射极击穿（最大）:30V 电流 - 集电极 (Ic)（最大）:1mA 电流 - 暗 (Id)（最大）:100nA 波长:880nm 视角:24° 功率 - 最大:100mW 安装类型:通孔 方向:顶视图 封装/外壳:径向 |
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