参数资料
型号: PPC5604BCLL64
厂商: Freescale Semiconductor
文件页数: 63/109页
文件大小: 0K
描述: MCU 32BIT 512K 64MHZ
标准包装: 90
系列: MPC56xx Qorivva
核心处理器: e200z0h
芯体尺寸: 32-位
速度: 64MHz
连通性: CAN,I²C,LIN,SCI,SPI
外围设备: POR,PWM,WDT
输入/输出数: 79
程序存储器容量: 512KB(512K x 8)
程序存储器类型: 闪存
EEPROM 大小: 4K x 16
RAM 容量: 32K x 8
电压 - 电源 (Vcc/Vdd): 3 V ~ 3.6 V
数据转换器: A/D 28x10b
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: 100-LQFP
包装: 托盘
Package pinouts and signal descriptions
MPC5604B/C Microcontroller Data Sheet, Rev. 11.1
Freescale Semiconductor
57
ECC circuitry provides correction of single bit faults and is used to improve further automotive reliability results. Some units
will experience single bit corrections throughout the life of the product with no impact to product reliability.
3.19.2
Flash power supply DC characteristics
Table 31 shows the power supply DC characteristics on external supply.
Table 29. Flash module life
Symbol
C
Parameter
Conditions
Value
Unit
Min
Typ
Max
P/E
CC C Number of program/erase cycles
per block over the operating
temperature range (TJ)
16 KB blocks
100,000
cycles
32 KB blocks
10,000 100,000
128 KB blocks
1,000 100,000
Retention CC C Minimum data retention at 85 °C
average ambient temperature1
1 Ambient temperature averaged over duration of application, not to exceed recommended product operating
temperature range.
Blocks with
0–1,000 P/E cycles
20
years
Blocks with
1,001–10,000 P/E cycles
10
Blocks with
10,001–100,000 P/E cycles
5—
Table 30. Flash read access timing
Symbol
C
Parameter
Conditions1
1 VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = 40 to 125 °C, unless otherwise specified
Max
Unit
fREAD CC P Maximum frequency for Flash reading
2 wait states
64
MHz
C
1 wait state
40
C
0 wait states
20
Table 31. Flash memory power supply DC electrical characteristics
Symbol
C
Parameter
Conditions1
Value
Unit
Min
Typ Max
IFREAD2 CC D Sum of the current consumption on
VDD_HV and VDD_BV on read access
Code flash memory module read
fCPU = 64 MHz3
—15
33
mA
Data flash memory module read
fCPU = 64 MHz3
—15
33
IFMOD2 CC D Sum of the current consumption on
VDD_HV and VDD_BV on matrix
modification (program/erase)
Program/Erase ongoing while
reading code flash memory
registers fCPU =64 MHz3
—15
33
mA
Program/Erase ongoing while
reading data flash memory
registers fCPU =64 MHz3
—15
33
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