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参数资料
| 型号： | PS11012 |
| 厂商： | Powerex Inc |
| 文件页数： | 3/6页 |
| 文件大小： | 0K |
| 描述： | MOD IPM 3PHASE IGBT 600V 4A |
| 标准包装： | 3 |
| 类型： | IGBT |
| 配置： | 三相反相器 |
| 电流： | 4A |
| 电压： | 600V |
| 电压 - 隔离： | 2500Vrms |
| 封装/外壳： | 40-DIP 模块 |
MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
PS11012
FLAT-BASE TYPE
INSULATED TYPE
TOTAL SYSTEM
Symbol
T j
T stg
T C
V iso
—
Item
Junction temperature
Storage temperature
Module case operating temperature
Isolation voltage
Mounting torque
Condition
(Note 2)
—
(Fig. 3)
60 Hz sinusoidal AC applied between all terminals and
the base plate for 1 minute.
Mounting screw: M3.5
Ratings
–20 ~ +125
–40 ~ +125
–20 ~ +100
2500
0.78 ~ 1.27
Unit
° C
° C
° C
Vrms
kg·cm
Note 2) The item defines the maximum junction temperature for the power elements (IGBT/Diode) of the ASIPM to ensure safe operation. How-
ever, these power elements can endure junction temperature as high as 150 ° C instantaneously . To make use of this additional tem-
perature allowance, a detailed study of the exact application conditions is required and, accordingly, necessary information is requested
to be provided before use.
CASE TEMPERATURE MEASUREMENT POINT (3mm from the base surface)
TC
(Fig. 3)
THERMAL RESISTANCE
Symbol
Rth(j-c) Q
Rth(j-c) F
Rth(j-c) QB
Rth(j-c) FB
Rth(j-c) FR
Rth(c-f)
Item
Junction to case Thermal
Resistance
Contact Thermal Resistance
Condition
Inverter IGBT (1/6)
Inverter FWDi (1/6)
Brake IGBT
Brake FWDi
Converter Di (1/6)
Case to fin, thermal grease applied (1 Module)
Min.
—
—
—
—
—
—
Ratings
Typ.
—
—
—
—
—
—
Max.
6.1
6.1
7.3
6.1
4.8
0.053
Unit
° C/W
° C/W
° C/W
° C/W
° C/W
° C/W
ELECTRICAL CHARACTERISTICS (Tj = 25 ° C, V DH = 15V, V DB = 15V unless otherwise noted)
Symbol
V CE(sat)
V EC
V CE(sat)Br
V FBr
Item
Collector-emitter saturation voltage
FWDi forward voltage
Brake IGBT
Collector-emitter saturation voltage
Brake diode forward voltage
Condition
V DH = V DB = 15V, Input = ON, Tj = 25 ° C, I C = 4A
Tj = 25 ° C, I C = –4A, Input = OFF
V DH = 15V, Input = ON, Tj = 25 ° C, I C = 2A
Tj = 25 ° C, I F = 2A, Input = OFF
Min.
—
—
—
—
Ratings
Typ.
—
—
—
—
Max.
2.9
2.9
3.5
2.9
Unit
V
V
V
V
I RRM
Converter diode reverse current V R = V RRM , Tj = 125 ° C
—
—
8
mA
V FR
ton
tc(on)
toff
tc(off)
trr
Converter diode voltage
Switching times
FWD reverse recovery time
Tj = 25 ° C, I F = 5A
1/2 Bridge inductive load, Input = ON
V CC = 300V, Ic = 4A, Tj = 125 ° C
V DH = 15V, V DB = 15V
Note : ton, toff include delay time of the internal control
circuit
—
0.3
—
—
—
—
—
0.6
0.2
1.1
0.35
0.1
1.5
1.5
0.6
1.8
1.0
—
V
μ s
μ s
μ s
μ s
μ s
Short circuit endurance
(Output, Arm, and Load,
Short Circuit Modes)
Switching SOA
V CC ≤ 400V, Input = ON (one-shot)
Tj = 125 ° C start
13.5V ≤ V DH = V DB ≤ 16.5V
V CC ≤ 400V, Tj ≤ 125 ° C,
Ic < I OL (CL) operation level, Input = ON
13.5V ≤ V DH = V DB ≤ 16.5V
? No destruction
? F O output by protection operation
? No destruction
? No protecting operation
? No F O output
Jan. 2000
相关PDF资料 |
PDF描述 |
|---|---|
| PS11013 | MOD IPM 3PHASE IGBT 600V 8A |
| PS11014 | MOD IPM 3PHASE IGBT 600V 15A |
| PS11015 | MOD IPM 3PHASE IGBT 600V 20A |
| PS11016 | MOD IPM 3PHASE IGBT 600V 30A |
| PS11017 | MOD IPM 3PHASE IGBT 600V 50A |
相关代理商/技术参数 |
参数描述 |
|---|---|
| PS11013 | 功能描述:MOD IPM 3PHASE IGBT 600V 8A RoHS:否 类别:半导体模块 >> 功率驱动器 系列:- 标准包装:15 系列:SPM® 类型:FET 配置:三相反相器 电流:1.8A 电压:500V 电压 - 隔离:1500Vrms 封装/外壳:23-DIP 模块 |
| PS11014 | 功能描述:MOD IPM 3PHASE IGBT 600V 15A RoHS:否 类别:半导体模块 >> 功率驱动器 系列:- 标准包装:15 系列:SPM® 类型:FET 配置:三相反相器 电流:1.8A 电压:500V 电压 - 隔离:1500Vrms 封装/外壳:23-DIP 模块 |
| PS11015 | 功能描述:MOD IPM 3PHASE IGBT 600V 20A RoHS:否 类别:半导体模块 >> 功率驱动器 系列:- 标准包装:15 系列:SPM® 类型:FET 配置:三相反相器 电流:1.8A 电压:500V 电压 - 隔离:1500Vrms 封装/外壳:23-DIP 模块 |
| PS11016 | 功能描述:MOD IPM 3PHASE IGBT 600V 30A RoHS:否 类别:半导体模块 >> 功率驱动器 系列:- 标准包装:15 系列:SPM® 类型:FET 配置:三相反相器 电流:1.8A 电压:500V 电压 - 隔离:1500Vrms 封装/外壳:23-DIP 模块 |
| PS11017 | 功能描述:MOD IPM 3PHASE IGBT 600V 50A RoHS:否 类别:半导体模块 >> 功率驱动器 系列:- 标准包装:15 系列:SPM® 类型:FET 配置:三相反相器 电流:1.8A 电压:500V 电压 - 隔离:1500Vrms 封装/外壳:23-DIP 模块 |
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