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参数资料
| 型号： | PS11012 |
| 厂商： | Powerex Inc |
| 文件页数： | 4/6页 |
| 文件大小： | 0K |
| 描述： | MOD IPM 3PHASE IGBT 600V 4A |
| 标准包装： | 3 |
| 类型： | IGBT |
| 配置： | 三相反相器 |
| 电流： | 4A |
| 电压： | 600V |
| 电压 - 隔离： | 2500Vrms |
| 封装/外壳： | 40-DIP 模块 |
MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
PS11012
FLAT-BASE TYPE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, V DH = 15V, V DB = 15V UNLESS OTHERWISE NOTED)
Symbol
I DH
V th(on)
V th(off)
R i
f PWM
t xx
t dead
t int
Item
Circuit current
Input on threshold voltage
Input off threshold voltage
Input pull-up resistor
PWM input frequency
Allowable input on-pulse width
Allowable input signal dead time for
blocking arm shoot-through
Input inter-lock sensing
Condition
V DH = 15V, V CIN = 5V
Integrated between input terminal-V DH
T C ≤ 100 ° C, Tj ≤ 125 ° C
V DH = 15V, T C = –20 ° C ~ +100 ° C (Note 3)
Relates to corresponding input
(Except brake part) T C = –20 ° C ~ +100 ° C
Relates to corresponding input (Except brake part)
Min.
—
0.8
2.5
—
2
1
2.2
—
Ratings
Typ.
—
1.4
3.0
150
—
—
—
65
Max.
150
2.0
4.0
—
20
500
—
100
Unit
mA
V
V
k ?
kHz
μ s
μ s
ns
V CO
V C+ (200%)
V C– (200%)
Analogue signal linearity with
output current
Ic = 0A
Ic = I OP (200%)
Ic = –I OP (200%)
V DH = 15V
T C = –20 ° C ~ +100 ° C
(Fig. 4)
1.87
0.77
2.97
2.27
1.17
3.37
2.57
1.47
3.67
V
V
V
| ? V CO |
Offset change area vs temperature
V DH = 15V, T C = –20 ° C ~ +100 ° C
—
15
—
mV
V C+
V C–
Analogue signal output voltage limit
Ic > I OP (200%), V DH = 15V
(Fig. 4)
—
4.0
—
—
0.7
—
V
V
? V C (200%) Analogue signal over all linear variation
r CH Analogue signal data hold accuracy
|V CO -V C ± (200%)|
Correspond to max. 500 μ s data hold period
only, Ic = I OP (200%) (Fig. 5)
—
–5
1.1
—
—
5
V
%
t d(read)
± I OL
Analogue signal reading time
Current limit warning (CL) operation level
After input signal trigger point
V DH =15V, T C = –20 ° C ~ +100 ° C
(Fig. 8)
(Note 4)
—
4.77
3
5.80
—
6.90
μ s
A
I CL(H)
I CL(L)
Signal output current of
CL operation
Idle
Active
Open collector output
—
—
—
1
1
—
μ A
mA
SC
Short circuit over current trip level
Tj = 25 ° C
(Fig. 7) (Note 5)
6.95
12.0
19.2
A
OT
OTr
UV DH
UV DHr
OV DH
OV DHr
UV DB
UV DBr
t dV
I FO(H)
I FO(L)
Over temperature protection
Supply circuit under &
over voltage protection
Fault output current
Trip level
Reset level
Trip level
Reset level
Trip level
Reset level
Trip level
Reset level
Filter time
Idle
Active
V DH =15V
T C = –20 ° C ~ +100 ° C
Tj ≤ 125 ° C
Open collector output
100
—
11.05
11.55
18.00
16.50
10.0
10.5
—
—
—
110
90
12.00
12.50
19.20
17.50
11.0
11.5
10
—
1
120
—
12.75
13.25
20.15
18.65
12.0
12.5
—
1
—
° C
° C
V
V
V
V
V
V
μ s
μ A
mA
(Note 3) : (a) Allowable minimum input on-pulse width : This item applies to P-side circuit only.
(b) Allowable maximum input on-pulse width : This item applies to both P-side and N-side circuits excluding the brake circuit.
(Note4) : CL output : The "current limit warning (CL) operation circuit outputs warning signal whenever the arm current exceeds this limit. The
circuit is reset automatically by the next input signal and thus, it operates on a pulse-by-pulse scheme.
(Note5) : The short circuit protection works instantaneously when a high short circuit current flows through an internal IGBT rising up momen-
tarily. The protection function is, thus meant primarily to protect the ASIPM against short circuit distraction. Therefore, this function is
not recommended to be used for any system load current regulation or any over load control as this might, cause a failure due to
excessive temperature rise. Instead, the analogue current output feature or the over load warning feature (CL) should be appropri-
ately used for such current regulation or over load control operation. In other words, the PWM signals to the ASIPM should be shut
down, in principle, and not to be restarted before the junction temperature would recover to normal, as soon as a fault is feed back
from its F O1 pin of the ASIPM indicating a short circuit situation.
RECOMMENDED CONDITIONS
Symbol
V CC
V DH , V DB
Item
Supply voltage
Control supply voltage
Condition
Applied across P2-N terminals
Applied between V DH -GND, C BU+ -C BU– , C BV+ -C BV– ,
C BW+ -C BW–
Ratings
400 (max.)
15 ± 1.5
Unit
V
V
? V DH , ? V DB Supply voltage ripple
± 1 (max.)
V/ μ s
V CIN(on)
V CIN(off)
Input on voltage
Input off voltage
0 ~ 0.3
4.8 ~ 5.0
V
V
f PWM
t dead
PWM Input frequency
Arm shoot-through blocking time
Using application circuit
Using application circuit
2 ~ 20
2.2 (min.)
kHz
μ s
Jan. 2000
相关PDF资料 |
PDF描述 |
|---|---|
| PS11013 | MOD IPM 3PHASE IGBT 600V 8A |
| PS11014 | MOD IPM 3PHASE IGBT 600V 15A |
| PS11015 | MOD IPM 3PHASE IGBT 600V 20A |
| PS11016 | MOD IPM 3PHASE IGBT 600V 30A |
| PS11017 | MOD IPM 3PHASE IGBT 600V 50A |
相关代理商/技术参数 |
参数描述 |
|---|---|
| PS11013 | 功能描述:MOD IPM 3PHASE IGBT 600V 8A RoHS:否 类别:半导体模块 >> 功率驱动器 系列:- 标准包装:15 系列:SPM® 类型:FET 配置:三相反相器 电流:1.8A 电压:500V 电压 - 隔离:1500Vrms 封装/外壳:23-DIP 模块 |
| PS11014 | 功能描述:MOD IPM 3PHASE IGBT 600V 15A RoHS:否 类别:半导体模块 >> 功率驱动器 系列:- 标准包装:15 系列:SPM® 类型:FET 配置:三相反相器 电流:1.8A 电压:500V 电压 - 隔离:1500Vrms 封装/外壳:23-DIP 模块 |
| PS11015 | 功能描述:MOD IPM 3PHASE IGBT 600V 20A RoHS:否 类别:半导体模块 >> 功率驱动器 系列:- 标准包装:15 系列:SPM® 类型:FET 配置:三相反相器 电流:1.8A 电压:500V 电压 - 隔离:1500Vrms 封装/外壳:23-DIP 模块 |
| PS11016 | 功能描述:MOD IPM 3PHASE IGBT 600V 30A RoHS:否 类别:半导体模块 >> 功率驱动器 系列:- 标准包装:15 系列:SPM® 类型:FET 配置:三相反相器 电流:1.8A 电压:500V 电压 - 隔离:1500Vrms 封装/外壳:23-DIP 模块 |
| PS11017 | 功能描述:MOD IPM 3PHASE IGBT 600V 50A RoHS:否 类别:半导体模块 >> 功率驱动器 系列:- 标准包装:15 系列:SPM® 类型:FET 配置:三相反相器 电流:1.8A 电压:500V 电压 - 隔离:1500Vrms 封装/外壳:23-DIP 模块 |
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