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| 型号： | PS501-I/SS |
| 厂商： | Microchip Technology |
| 文件页数： | 35/42页 |
| 文件大小： | 0K |
| 描述： | IC FIELD REPROG BATT MGR 28SSOP |
| 标准包装： | 47 |
| 功能： | 充电管理 |
| 电池化学： | 锂离子（Li-Ion）、锂聚合物（Li-Pol） |
| 电源电压： | 5.6 V ~ 18 V |
| 工作温度： | -20°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 28-SSOP（0.209"，5.30mm 宽） |
| 供应商设备封装： | 28-SSOP |
| 包装： | 管件 |
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PS501
10.0
ELECTRICAL CHARACTERISTICS
TABLE 10-1:
ABSOLUTE MAXIMUM RATINGS
Symbol
V CX
V PIN
T BIAS
T STORAGE
Parameter
Voltage at any VC(x) pin
Voltage directly at any pin (except V CELL x)
Temperature under Bias
Storage Temperature (package dependent)
Min
-0.3
-0.5
-20
-35
Max
18.5
7.0
85
125
Units
V
V
°C
°C
Note:
These are stress ratings only. Stress greater than the listed ratings may cause permanent damage to the device.
Exposure to absolute maximum ratings for an extended period may affect device reliability. Functional operation
is implied only at the listed operating conditions below.
TABLE 10-2:
DC CHARACTERISTICS (T A = -20°C TO +85°C; V REG (INTERNAL) = +3.3V ± 10%)
Symbol
V SUPPLY
I DD
I DDRUN
I DDINS
I DDSSLP
I DDSLP
I WAKE
Characteristic
Supply Voltage – Applied to VC(1)
Instantaneous Supply Current
Average Supply Current – Run Mode
Inactive Supply Current – Sample Mode
Inactive Supply Current – Low-Power Mode
Average Supply Current – Ultra Low-Power Mode
Wake-up Current Threshold from Sleep Mode –
Min
5.6
—
—
—
—
—
2.50
Typ
—
220
175
150
25
0.8
3.75
Max
18.0
—
—
—
—
1
5.00
Units
V
μ A
μ A
μ A
μ A
μ A
mV
Condition
(Note 1)
A/D active (Note 1)
A/D inactive (Note 1, 2)
A/D inactive (Note 1, 2)
Sleep mode (Note 1, 4)
(voltage across sense resistor)
V IL
V IH
I IL - IOPU
I IH - IOPD
I L
Input Low Voltage – GPIO(7-0)
Input High Voltage – GPIO(7-0)
GPIO Input Low Current – Pull-up Mode
GPIO Input High Current – Pull-down Mode
Leakage Current – GPIO pins Programmed
—
0.8 * V DDD
-37.5
-37.5
—
—
—
-110
-110
1
0.2 * V DDD
—
-140
-140
2
V
V
μ A
μ A
μ A
as Outputs
V OL
V OH - IO
Output Low Voltage for GPIO(7-0)
Output High Voltage for GPIO(7-0)
—
2.0
—
—
0.6
—
V
V
I OL = 0.5 mA
I OH = 100 μ A
(non-LED mode)
V OH - LED
V SR
V NTC
V REFT
V IL - SMB
V IH - SMB
V OL - SMB
V OH - SMB
Output High Voltage for GPIO(7-0) (LED mode)
Sense Resistor Input Voltage Range
Thermistor Input Voltage Range
NTC Reference Voltage Output at V REFT pin
Input Low Voltage for SMBus pins
Input High Voltage for SMBus pins
Output Low Voltage for SMBus pins
Output High Voltage for SMBus pins
2.0
-152
0
—
-0.5
2.0
—
2.1
—
—
—
150
—
—
—
—
—
152
152
—
0.8
5.5
0.4
5.5
V
mV
mV
mV
V
V
V
V
I OH = 10 mA (Note 3)
I PULLUP = 350 μ A
I PULLUP - SMB Current through Pull-up Resistor or Current
100
—
350
μ A
Source for SMBus pins
I LEAK - SMB
Input Leakage Current – SMBus pins
—
—
±5
μ A
Note 1:
2:
3:
4:
Does not include current consumption due to external loading on pins. Valid for a maximum voltage of 16.8 volts
for the referenced current specification.
Sample mode current is specified during an A/D inactive cycle. Sample mode average current can be calculated using
the formula: Average Sample Mode Supply Current = (I DDRUN + (n – 1) * I DDINS )/n; where ‘n’ is the programmed
sample rate.
During LED illumination, currents may peak at 10 mA but average individual LED current is typically 5 mA (using
low-current, high-brightness devices).
Measured at 25°C.
? 2004 Microchip Technology Inc.
DS21818C-page 35
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