参数资料
| 型号： | PS700T-I/ST |
| 厂商： | Microchip Technology |
| 文件页数： | 6/38页 |
| 文件大小： | 0K |
| 描述： | IC BATT MONITOR 1-2CELL 8TSSOP |
| 标准包装： | 1 |
| 功能： | 电池监控器 |
| 电池化学： | 锂离子（Li-Ion） |
| 电源电压： | 2.7 V ~ 9 V |
| 工作温度： | -20°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-TSSOP |
| 包装： | 剪切带 (CT) |
| 其它名称： | PS700T-I/STCT |
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PS700
3.1.2
CURRENT MEASUREMENT
The following table shows LSB values for 9-bit plus
Charge and discharge currents are measured using a
sign resolution, so n = 9.
5 to 600 m ? sense resistor that is connected between
the SR and GND pins. The maximum input voltage at
SR is ±150 mV. The sense resistor should be properly
TABLE 3-3:
LSB VALUES FOR 10-BIT
RESOLUTION
sized to accommodate the systems lowest and highest
expected charge and discharge currents including
suspend and/or standby currents.
In order to perform charge and discharge current
Measurement
V PACK
V CELL
VR
340
340
Divider
1/30
1/18.33
Bits
9 + sign
9 + sign
LSB
19.92
12.17
measurements, the Ictrl register must be programmed
with the SR pin as the analog input source. If charge
and discharge accumulation is desired, the Ictrl and
corresponding Ires registers should be used to select
VPctrl programming in a typical application is as
follows.
current measurement since the DCA, DTC, CCA and
TABLE 3-4:
VPctrl PROGRAMMING
DCA registers are updated by the measurement results
from the Ires register.
Ictrl programming in a typical application is as follows.
Bit(s)
7
6-4
Name
En
Res
Value
1
001
Function
Enables A/D conversion
Selects 10-bit resolution
TABLE 3-2:
Ictrl PROGRAMMING
3
Ref
1
Selects ±340 mV reference
Bit(s)
Name
Value
Function
2-0
Sel
011
Selects V SR as converter input
7
6-4
3
2-0
En
Res
Ref
Sel
1
111
0
000
Enables A/D conversion
Selects 16-bit resolution
Selects ±170 mV reference
Selects V SR as converter input
The input source fields for the VPctrl, VC1ctrl and
VC2ctrl registers must be programmed to select pack
voltage (on VC1), VC1 cell voltage and VC2 cell
voltage in order for these registers to control their
intended measurements.
Using the maximum resolution of 16 bits, the voltage
value of the LSB is:
A/D LSB = 340 mV/2 16 = 5.19 μ V
Using a sense resistor value of 20 m ? , the value of the
LSB in units of current is:
3.1.4 TEMPERATURE MEASUREMENTS
A/D input channels are provided for temperature mea-
surement using either the internal temperature sensor
or an external thermistor.
5.19 μ V/20 m ? = 259 μ A
3.1.4.1
Internal Temperature
The output of the internal temperature sensor is a volt-
3.1.3
VOLTAGE MEASUREMENTS
age range with limits that correspond to operating
Analog mux inputs are provided to support measure-
ment of individual cell and battery pack voltages. A/D
control registers VPctrl, VC1ctrl and VC2ctrl are used
to specify the measurement to be made. In typical
applications, voltage measurement at the cell or pack
level is done using the +340 mV reference and a
resolution of 10 bits plus sign bit.
The value of the LSB in a pack voltage measurement
using a 340 mV reference voltage is given by the formula:
V PACK LSB = 10.2V/2 n
Where “n” is the resolution selected. For typical
applications where n = 10:
V PACK LSB = 10.2V/2 10 = 10.2V/1024 = 9.96 mV
The value of the LSB in a cell voltage measurement
using a 340 mV reference voltage is given by the
formula:
temperature limits as follows:
-20°C → 239 mV
+70°C → 312 mV
The output voltage of the internal sensor as a function
of temperature can be given as:
V IT (mV) = 239 + 0.82 * (T + 20)
Defined within the ITctrl registers are the settings for
the reference utilized and the resolution desired for
measurement of temperature using the internal tem-
perature sensor. Because of input voltage range
described above, the 340 mV reference should be
selected. Typically, 10-bit plus sign of resolution are
selected which results in the following temperature
resolution:
LSB (Voltage) = Full Scale Range/# of steps
= 340 mV/2 10 = 332 μ V/LSB
V CELL LSB = 6.23V/2 n
Where “n” is the resolution selected. For typical
applications where n = 10:
V CELL LSB = 6.23V/2 10 = 6.23V/1024 = 6.08 mV
DS21760F-page 6
LSB (°C)
= 332 μ V/LSB * (1 / 820) °C/ μ V
= 0.404°C/LSB
? 2004 Microchip Technology Inc.
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