参数资料
| 型号： | PS9506L3-AX |
| 厂商： | CEL |
| 文件页数： | 18/21页 |
| 文件大小： | 0K |
| 描述： | PHOTOCOUPLER IGBT GATE DVR 8SMD |
| 标准包装： | 50 |
| 系列： | NEPOC |
| 电压 - 隔离： | 5000Vrms |
| 通道数： | 1，单向 |
| 电流 - 输出 / 通道： | 500mA |
| 传输延迟高 - 低 @ 如果： | 180ns @ 10mA |
| 电流 - DC 正向(If)： | 12mA |
| 输入类型： | DC |
| 输出类型： | 栅极驱动器 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD |
| 供应商设备封装： | 8-SDIP 鸥翼型 |
| 包装： | 散装 |
A Business Partner of Renesas Electronics Corporation.
Preliminary document
PS9506,PS9506L1,PS9506L2,PS9506L3
Chapter Title
<R>
USAGE CAUTIONS
1. This product is weak for static electricity by designed with high-speed integrated circuit so protect against static
electricity when handling.
2. Board designing
(1) By-pass capacitor of more than 0.1 μ F is used between V CC and GND near device. Also, ensure that the distance
between the leads of the photocoupler and capacitor is no more than 10 mm.
(2) When designing the printed wiring board, ensure that the pattern of the IGBT collectors/emitters is not too close
to the input block pattern of the photocoupler.
If the pattern is too close to the input block and coupling occurs, a sudden fluctuation in the voltage on the IGBT
output side might affect the photocoupler’s LED input, leading to malfunction or degradation of characteristics.
(If the pattern needs to be close to the input block, to prevent the LED from lighting during the off state due to
the abovementioned coupling, design the input-side circuit so that the bias of the LED is reversed, within the
range of the recommended operating conditions, and be sure to thoroughly evaluate operation.)
(3) Pins 1, 4 (which is an NC *1 pin) can either be connected directly to the GND pin on the LED side or left open.
Also, Pin 7 (which is an NC *1 pin) can either be connected directly to the GND pin on the detector side or left
open.
Unconnected pins should not be used as a bypass for signals or for any other similar purpose because this may
degrade the internal noise environment of the device.
Note: *1. NC: Non-Connection (No Connection).
3. Make sure the rise/fall time of the forward current is 0.5 μ s or less.
4. In order to avoid malfunctions, make sure the rise/fall slope of the supply voltage is 3 V/ μ s or less.
5. Avoid storage at a high temperature and high humidity.
R 0 8 D S 0 0 1 8 E J 0 1 0 0 R e v . 1 . 0 0
Nov 10, 2011
P a g e 1 8 o f 2 0
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相关代理商/技术参数 |
参数描述 |
|---|---|
| PS9506L3-E3 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:0.6 A OUTPUT CURRENT, HIGH CMR, IGBT GATE DRIVE, 8-PIN DIP PHOTOCOUPLER |
| PS9506L3-E3-AX | 功能描述:高速光耦合器 High CMR IGBT Gate Drive RoHS:否 制造商:Avago Technologies 电流传递比: 最大波特率: 最大正向二极管电压:1.75 V 最大反向二极管电压:5 V 最大功率耗散:40 mW 最大工作温度:+125 C 最小工作温度:- 40 C 封装 / 箱体:SOIC-5 封装:Tube |
| PS9506L3-V | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:0.6 A OUTPUT CURRENT, HIGH CMR, IGBT GATE DRIVE, 8-PIN DIP PHOTOCOUPLER |
| PS9506L3-V-AX | 功能描述:高速光耦合器 High CMR IGBT Gate Drive RoHS:否 制造商:Avago Technologies 电流传递比: 最大波特率: 最大正向二极管电压:1.75 V 最大反向二极管电压:5 V 最大功率耗散:40 mW 最大工作温度:+125 C 最小工作温度:- 40 C 封装 / 箱体:SOIC-5 封装:Tube |
| PS9506L3-V-E3 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:0.6 A OUTPUT CURRENT, HIGH CMR, IGBT GATE DRIVE, 8-PIN DIP PHOTOCOUPLER |
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